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作 者:陈耿鑫 刘柳[1,2] Chen Gengxin;Liu Liu(College of Optical Science and Engineering,Zhejiang University,Hangzhou 310058,Zhejiang,China;Jiaxing Research Institute,Zhejiang University,Jiaxing 314000,Zhejiang,China)
机构地区:[1]浙江大学光电科学与工程学院,浙江杭州310058 [2]浙江大学嘉兴研究院,浙江嘉兴314000
出 处:《光学学报》2024年第15期1-21,共21页Acta Optica Sinica
基 金:国家自然科学基金(62135012);浙江省领军型创新创业团队(2021R01001);浙江省尖兵领雁研发攻关项目(2023C01139)。
摘 要:薄膜铌酸锂凭借着集成度高、透明波段宽、物理化学性质稳定的优势在近年来受到了广泛的关注和研究。相比于传统体材料铌酸锂调制器,薄膜铌酸锂调制器具有小尺寸、宽带宽、低功耗等优势,调制性能远远优于传统体材料铌酸锂调制器,是光通信领域中极具竞争力的光调制器件形式。薄膜铌酸锂的进一步发展将对信号处理、生物传感和量子信息等领域的广泛应用产生深刻影响。本文简要地概括了铌酸锂晶体材料的发展历史以及薄膜铌酸锂材料的制备方法,重点介绍并总结了不同结构形式、不同工艺平台以及不同工作波长的薄膜铌酸锂调制器,并对调制性能进行对比和综合评估,最后简要概括了薄膜铌酸锂调制器的相关应用。Significance The rapid development of 5G,cloud-based service,artificial intelligence,and the Internet of Things has led to explosive growth in data communication traffic,resulting in a dramatic increase in energy demand.To meet this ever-growing demand,energy-efficient optical transmission systems are required to support high-speed optical links.The key component of such systems,ranging from long-reach applications to short-reach interconnects in data centers and on-chip optical interconnects,is the electro-optical(EO)modulator.In this regard,EO modulators have continuously been the focus of research in this field since the emergence of optical communications.Given the challenges posed by data traffic and the energy crisis,it is imperative to develop high-performance EO modulators to support high-speed data transmission with low-power consumption,targeting several femtojoules per bit for next-generation transceivers.EO modulators can convert signals from the electrical domain to the optical domain at high speed.The amplitude,phase,frequency,and polarization of the optical carrier can be exploited to encode information.EO modulators are categorized into free-space and integrated types.In the former category,optical waves propagate freely,and free-space modulators can be based on multi-layers,metasurfaces,and diffraction grating structures.In contrast,integrated modulators in the latter category utilize guided modes within photonic integrated circuits.In this review,we exclusively focus on the integrated EO modulation.In recent decades,various EO modulators integrated on different photonic integrated circuits have been extensively studied,including silicon,indium phosphide(InP),and silicon-organic hybrid(SOH)structures.Pure silicon-based modulators operate through carrier injection or depletion within p-n junctions integrated into optical waveguides,which leads to an inherent trade-off between modulation efficiency and optical loss.InP-based modulators,while capable of achieving high data transmission rates,are con
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