硅基光电子芯片集成的胶体量子点有源器件(特邀)  

Silicon Photoelectron Chip Integrated Active Devices Based on Colloidal Quantum Dots(Invited)

作　　者：瞿俊伶 刘鹏[1] 甘雪涛[1] 赵建林[1] Qu Junling;Liu Peng;Gan Xuetao;Zhao Jianlin(School of Physical Science and Technology,Key Laboratory of Light Field Regulation and Information Perception,Ministry of Industry and Information Technology,Shaanxi Provincial Key Laboratory of Optical Information Technology,Northwestern Polytechnical University,Xi’an 710129,Shaanxi,China)

机构地区：[1]西北工业大学物理科学与技术学院,光场调控与信息感知工业和信息化部重点实验室,陕西省光信息技术重点实验室,陕西西安710129

出　　处：《光学学报》2024年第15期158-180,共23页Acta Optica Sinica

基　　金：国家重点研发计划(2022YFA1404800);国家自然科学基金(62205273,62375225,12374359);陕西数理基础科学研究项目(22JSY004);西安市科技计划项目(2023JH-ZCGJ-0023)。

摘　　要：胶体量子点(CQD)半导体材料具有吸收/发射谱段连续可调、荧光光谱窄(<30 nm)、量子产率高(约100%)、载流子输运灵活可控等优异的光电特性,以及大面积、低成本、无衬底限制等液相加工集成工艺优势,有望为硅基光电子芯片上有源器件的集成提供新的解决方案。从CQD的合成、光电特性、硅基片上集成工艺等角度展开讨论,并总结评述片上集成CQD有源器件的研究进展。最后,从硅基片上探测器、片上光源等角度,对基于CQD发展硅基光电子芯片上有源器件给出分析和展望。Significance Silicon photonics combines the high speed and broad bandwidth of optical signals with high-density and low-cost fabrication of the complementary metal oxide semiconductor(CMOS)technology,and it has been an attractive technology for various applications ranging from data centers to biosensing.However,silicon is not capable of building several active optoelectronic devices for fully integrated photonic circuits.For example,the indirect bandgap of silicon makes it challenging to achieve efficient light sources,the absence of the Pockels effect prevents silicon from building high-speed linear electro-optic modulators,and the absorption cutoff wavelength of 1100 nm makes silicon incompatible with telecom-band photodetection.A common strategy to overcome such limitations is the heterogenous/hybrid integration of material technology suitable for active optoelectronic devices,such as the epitaxy growth of germanium for telecom-band photodetectors and wafer-bonding of III-V semiconductors for on-chip lasers and modulators.However,such integration has problems including the lattice mismatch during epitaxy,high cost,low yield of bonding,and optical mode mismatch between different materials.Therefore,it is necessary to develop novel material platforms that can provide high-performance active devices with CMOS-compatible fabrication.In this regard,colloidal quantum dot(CQD)semiconductors featuring excellent optoelectronic properties,low-cost chemical synthesis,and CMOS-compatible solution-based fabrication emerge as a competitive material platform for active devices integrated into silicon photonic chips.Due to their continuously tunable bandgap from UV to THz enabled by the quantum confinement effect,near-unity photoluminescence quantum yield,narrow emission linewidth,and highly tunable carrier transport,the potential applications of the CQD have been demonstrated by the commercialization of CQD-enhanced liquid crystal display by Samsung company and the short-wave infrared camera of SWIR Vision Systems company.M

关 键 词：胶体量子点 硅基光电子芯片 有源器件 探测器 光源 

分 类 号：O436[机械工程—光学工程]