超低损耗氮化硅集成光学:非线性光学和应用(特邀)  

Ultralow-Loss Silicon Nitride Integrated Photonics:Nonlinear Optics and Applications(Invited)

作　　者：郑华敏 余鲲鹏 李世昌 陈睿扬 王嘉轩 陈智阳 石宝奇 王中凯 罗弋涵 龙金宝 孙威 梁伟 鲍成英 郭海润[6] 刘骏秋 Zheng Huamin;Yu Kunpeng;Li Shichang;Chen Ruiyang;Wang Jiaxuan;Chen Zhiyang;Shi Baoqi;Wang Zhongkai;Luo Yi-Han;Long Jinbao;Sun Wei;Liang Wei;Bao Chengying;Guo Hairun;Liu Junqiu(International Quantum Academy,Shenzhen 518048,Guangdong,China;Hefei National Laboratory,Hefei 230088,Anhui,China;Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen 518055,Guangdong,China;Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,Jiangsu,China;Tsinghua University,Beijing 100084,China;Shanghai University,Shanghai 200444,China)

机构地区：[1]深圳国际量子研究院,广东深圳518048 [2]合肥国家实验室,安徽合肥230088 [3]南方科技大学量子科学与工程研究院,广东深圳518055 [4]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123 [5]清华大学,北京100084 [6]上海大学,上海200444

出　　处：《光学学报》2024年第15期295-322,共28页Acta Optica Sinica

基　　金：国家自然科学基金(12261131503);科技创新2030——“量子通信与量子计算机”重大项目(2023ZD0301500);广东省重点实验室项目(2019B121203002);深圳市科技计划资助(RCJC20231211090042078);深港科技创新合作区深圳园区项目(HZQB-KCZYB2020050)。

摘　　要：超低损耗氮化硅(Si_(3)N_(4))集成光波导技术正逐渐成为集成光学领域的核心技术,受到了广泛的研究和关注。深入探讨了氮化硅集成光学的非线性效应,详细介绍了氮化硅微环波导的基础理论,并在此基础上阐述了氮化硅集成光波导中常见的非线性光学现象。此外,综述了近期基于氮化硅集成芯片器件的非线性光学效应的研究进展及现状,以及这些现象在集成光学、非线性光学和量子光学中的关键应用。这一综合性分析旨在为氮化硅集成光学技术的进一步研究和发展提供有力的支持和指导。Photonic integrated circuits(PICs),which manipulate photons on chips,have revolutionized modern information society in both science and applications.Endowed with intrinsic low power consumption,high-speed data transmission,and high-volume communication,integrated photonics has transitioned from academic research in laboratories to industrial deployment in data centers and optical communications.Leveraging the plentiful properties of light such as frequency,polarization,and amplitude,and combining interactions between light and materials,including various nonlinear effects,the photoelectric effect,and the photothermal effect,integrated photonics has produced multiple chip-scale functional devices for spectroscopy,positioning-navigation-timing(PNT),quantum information and optical computation.Compared to other integrated materials,such as silicon,lithium nitride,and various III-V materials,silicon nitride(Si_(3)N_(4))features comprehensive advantages like a wide transparency window from violet to mid-infrared,high power handling capability,large Kerr nonlinearity,and ultralow linear and nonlinear losses.These properties make it a leading material for Kerr nonlinear integrated photonics and offer the potential for applications beyond traditional materials.Over the past several decades,integrated photonics has evolved into a mature technology that enables the synthesis,processing,and detection of optical signals using PIC.Dating back to the 1980s,silicon-on-insulator(SOI)wafers,initially used for microelectronic circuits,were proposed for photonic circuits—an optical analog of silicon microelectronics that combines photonics and integration.Since then,silicon photonics has developed rapidly and extensively.Today,with heterogeneous and hybrid integration,silicon photonics has become a mature technology used in telecommunication and data centers to process high-data-rate optical signals based on small photonic chips.These chips can be manufactured in high volumes at low cost in well-established CMOS foundries.Despite

关 键 词：克尔非线性 Lugiato-Lefever方程 孤子光频梳 自注入锁定 微波合成 

分 类 号：O436[机械工程—光学工程]