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作 者:刘阳 王乾圣 周昊鹏 刘佳 张红广 陈代高 王磊 肖希 Liu Yang;Wang Qiansheng;Zhou Haopeng;Liu Jia;Zhang Hongguang;Chen Daigao;Wang Lei;Xiao Xi(National optoelectronics innovation center,Wuhan,430074,Hubei,China;State Key Laboratory of Optical Communication Technologies and Networks,China Information and Communication Technologies Group Corporation(CICT),Wuhan 430074,Hubei,China;Peng Cheng Laboratory,Department of Circuits and Systems,Shenzhen 518055,Guangdong,China)
机构地区:[1]国家信息光电子创新中心,湖北武汉430074 [2]武汉邮电科学研究院有限公司光通信技术和网络全国重点实验室,湖北武汉430074 [3]鹏城实验室电路与系统部,广东深圳518055
出 处:《光学学报》2024年第15期359-365,共7页Acta Optica Sinica
基 金:国家自然科学基金(U21A20454,62235017,U23A20356);2023年湖北省重大攻关项目(JD,2023BAA012);湖北省自然科学基金(2023AFB528)。
摘 要:高速率、热不敏感、低驱动电压的硅光子调制器是宽带数据传输、低功耗、高集成密度和稳定运行的光互连系统中必不可缺的核心器件。本文提出并实验验证一种基于耦合调制机理的跑道型硅基微环电光调制器,在峰-峰驱动电压小于1.2 V的条件下,实现112 Gbit/s四级脉冲幅度调制(PAM4)光信号传输。此外,使用氮化硅波导作为谐振腔的主要构成部分,调制器的温度敏感性小于2.5 pm/K,展现出良好的热稳定性,验证了在20℃到45℃温度范围内的112 Gbit/s PAM4信号传输。Objective High-speed,thermally insensitive,and low-driving voltage silicon photonic modulators are essential element for broadband data transmission,low power consumption,high integration density,and stable operation in optical interconnection systems.In this paper,we propose and experimentally demonstrate a racetrack-type silicon-based microring electro-optic modulator that utilizes a coupling modulation mechanism,achieving 112 Gbit/s four-level pulse amplitude modulation(PAM4)optical signal generation under a peak-to-peak driving voltage of less than 1.2 V.Moreover,by employing a silicon nitride waveguide as the resonant cavity,the modulator exhibits a measured thermal drift coefficient of less than 2.5 pm/K,showing excellent thermal stability and verifying stable electro-optic modulation of 112 Gbit/s PAM4 within a temperature range of 20℃to 45℃.This device scheme is expected to significantly reduce the power consumption of optical interconnection systems and enhance their thermal stability.Methods The modulator consists of a 2×2 Mach-Zehnder modulator(MZM)and a silicon nitride loop waveguide that connects two ports of the MZM.Two inverse tapers facilitate the transition of the optical mode from the silicon waveguide to the silicon nitride waveguide.By tuning the MZM,the coupling ratio of the racetrack ring resonator is modified,enabling the modulation of the optical signal’s intensity.The sharp resonance spectrum of the racetrack ring resonator allows for intensity modulation with minimal driving voltages.Meanwhile,due to the low thermo-optic coefficient(TOC)of silicon nitride(2.45×10^(-5) K^(-1)),the silicon nitride loop waveguide significantly suppresses the thermal sensitivity.Two grating couplers connecting with the other two ports of the MZM are utilized to couple optical signals in/out of the chip.The modulator is fabricated in a commercial 200 mm complementary metal oxide semiconductor(CMOS)foundry.A 2×2 MZM with length of 2.5 mm is used to modulate coupling coefficients of the racetrack ring
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