Growth process,defects,and dopants of bulk β-Ga_(2)O_(3) semiconductor single crystals  

作　　者：Yan-shen Wang Ming-zhi Zhu Yuan Liu 

机构地区：[1]School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China [2]Key Laboratory for Advanced Materials Processing Technology(Ministry of Education),Beijing 100084,China

出　　处：《China Foundry》2024年第5期491-506,共16页中国铸造（英文版）

摘　　要：β-gallium oxide(β-Ga2O3),as the typical representative of the fourth generation of semiconductors,has attracted increasing attention owing to its ultra-wide bandgap,superior optical properties,and excellent tolerance to high temperature and radiation.Compared to the single crystals of other semiconductors,high-quality and large-size β-Ga_(2)O_(3) single crystals can be grown with low-cost melting methods,making them highly competitive.In this review,the growth process,defects,and dopants ofβ-Ga_(2)O_(3) are primarily discussed.Firstly,the growth process(e.g.,decomposition,crucible corrosion,spiral growth,and development)ofβ-Ga_(2)O_(3) single crystals are summarized and compared in detail.Then,the defects of β-Ga_(2)O_(3) single crystals and the influence of defects on Schottky barrier diode(SBD)devices are emphatically discussed.Besides,the influences of impurities and intrinsic defects on the electronic and optical properties ofβ-Ga_(2)O_(3) are also briefly discussed.Concluding this comprehensive analysis,the article offers a concise summary of the current state,challenges and prospects ofβ-Ga_(2)O_(3) single crystals.

关 键 词：β-Ga_(2)O_(3) single-crystal growth DEFECTS DOPANTS SEMICONDUCTOR 

分 类 号：O78[理学—晶体学]