Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors  

作　　者：Xiao Li Zhikang Ma Jinxiong Li Wengao Pan Congwei Liao Shengdong Zhang Zhuo Gao Dong Fu Lei Lu 

机构地区：[1]School of Electronic and Computer Engineering,Peking University,Shenzhen 518055,China [2]Guangdong Juhua Printed Display Technology Company Limited,Guangzhou 510700,China

出　　处：《Journal of Semiconductors》2024年第10期54-59,共6页半导体学报（英文版）

基　　金：supported by National Key Research and Development Program(2021YFB3600802);Shenzhen Municipal Scientific Program(JSGG20220831103803007,SGDX20211123145404006);Guangdong Basic and Applied Basic Research Foundation(2022A1515110029)

摘　　要：This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)device.Although the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well.Benefited from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT.

关 键 词：oxide semiconductor thin-film transistors two-dimensional electron gas HETEROJUNCTION high mobility 

分 类 号：TN321.5[电子电信—物理电子学]