Structure and electrical properties of polysilicon films doped with ammonium tetraborate tetrahydrate  

作　　者：Yehua Tang Yuchao Wang Chunlan Zhou Ke-Fan Wang 

机构地区：[1]Electrical and Energy Engineering Department,Nantong Institute of Technology,Nantong 226000,China [2]Ningxia Research Center of Silicon Target and Silicon-Carbon Negative Materials Engineering Technology,School of Materials Science and Engineering,North Minzu University,Yinchuan 750021,China [3]Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100049,China [4]School of Engineering Science,University of Chinese Academy of Sciences,Beijing 100049,China [5]Henan Key Laboratory of Quantum Materials and Quantum Energy,School of Future Technology,Henan University,Kaifeng 475004,China

出　　处：《Journal of Semiconductors》2024年第10期60-68,共9页半导体学报（英文版）

基　　金：support given by the Natural Science Foundation of Nantong(Grant NO.JC2023065);the Research Program of Nantong Institute of Technology(Grant NO.2023XK(B)07).

摘　　要：Here,p-type polysilicon films are fabricated by ex-situ doping method with ammonium tetraborate tetrahydrate(ATT)as the boron source,named ATT-pPoly.The effects of ATT on the properties of polysilicon films are comprehensively analyzed.The Raman spectra reveal that the ATT-pPoly film is composed of grain boundary and crystalline regions.The preferred orientation is the(111)direction.The grain size increases from 16−23 nm to 21−47 nm,by~70%on average.Comparing with other reported films,Hall measurements reveal that the ATT-pPoly film has a higher carrier concentration(>10^(20)cm^(−3))and higher carrier mobility(>30 cm2/(V·s)).The superior properties of the ATT-pPoly film are attributed to the heavy doping and improved grain size.Heavy doping property is proved by the mean sheet resistance(Rsheet,m)and distribution profile.The R_(sheet,m)decreases by more than 30%,and it can be further decreased by 90%if the annealing temperature or duration is increased.The boron concentration of ATT-pPoly film annealed at 950℃ for 45 min is~3×10^(20)cm^(−3),and the distribution is nearly the same,except near the surface.Besides,the standard deviation coefficient(σ)of Rsheet,m is less than 5.0%,which verifies the excellent uniformity of ATT-pPoly film.

关 键 词：polysilicon film boron doping ammonium tetraborate tetrahydrate(ATT) electrical properties CRYSTALLIZATION 

分 类 号：TN304.12[电子电信—物理电子学]