All-optical nanoscale thermometry with silicon carbide color centers  

作　　者：CHENGYING LIU HAIBO HU ZHENGTONG LIU SHUMIN XIAO JUNFENG WANG YU ZHOU QINGHAI SONG 

机构地区：[1]Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System,Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems,Harbin Institute of Technology,Shenzhen 518055,China [2]Pengcheng Laboratory,Shenzhen 518055,China [3]Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area,Shenzhen-Hong Kong International Science and Technology Park,Shenzhen 518045,China [4]Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China [5]College of Physics,Sichuan University,Chengdu 610065,China

出　　处：《Photonics Research》2024年第8期1696-1702,共7页光子学研究（英文版）

基　　金：National Key Research and Development Program of China(2021YFA1400802);National Natural Science Foundation of China(12304568,12334016,11934012,12025402,62125501,12261131500,92250302,11975221);Guangdong Basic and Applied Basic Research Foundation(2022A1515110382);Guangdong Provincial Quantum Science Strategic Initiative(GDZX2303001,GDZX2306002,GDZX2200001);Shenzhen Fundamental Research Project(JCYJ20230807094408018);Young Elite Scientists Sponsorship Program by CAST;New Cornerstone Science Foundation through the XPLORER PRIZE;Fundamental Research Funds for the Central Universities(2022FRRK030004,2023FRFK03049)。

摘　　要：All-optical thermometry plays a crucial role in precision temperature measurement across diverse fields.Quantum defects in solids are one of the most promising sensors due to their excellent sensitivity,stability,and biocompatibility.Yet,it faces limitations,such as the microwave heating effect and the complexity of spectral analysis.Addressing these challenges,we introduce a novel approach to nanoscale optical thermometry using quantum defects in silicon carbide(SiC),a material compatible with complementary metal-oxide-semiconductor(CMOS)processes.This method leverages the intensity ratio between anti-Stokes and Stokes emissions from SiC color centers,overcoming the drawbacks of traditional techniques such as optically detected magnetic resonance(ODMR)and zero-phonon line(ZPL)analysis.Our technique provides a real-time,highly sensitive(1.06%K^(-1)),and diffraction-limited temperature sensing protocol,which potentially helps enhance thermal management in the future miniaturization of electronic components.

关 键 词：CARBIDE OPTICAL CENTERS 

分 类 号：TB942[一般工业技术—计量学]