Al_(1-x)Sc_(x)Sb_(y)N_(1-y):An opportunity for ferroelectric semiconductor field effect transistor  

作　　者：Shujin Guo Xianghua Kong Hong Guo 

机构地区：[1]College of Physics and Electronic Engineering,Center for Computational Sciences,Sichuan Normal University,Chengdu 610068,China [2]College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China [3]Department of Physics,McGill University,Montreal H3A 2T8,Canada

出　　处：《Science China(Physics,Mechanics & Astronomy)》2024年第11期133-140,共8页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.12347101)(Shujin Guo);financial support by the National Natural Science Foundation of China(Grant No.12104313)(Xianghua Kong);Department of Science and Technology of Guangdong Province(Grant No.2021QN02L820)(Xianghua Kong);Shenzhen Science and Technology Program(Grant No.RCYX20231211090126026)(Xianghua Kong);Shenzhen Natural Science Fund(the Stable Support Plan Program)(Grant No.20220810161616001)(Xianghua Kong);Natural Sciences and Engineering Research Council(NSERC)of Canada(Hong Guo)。

摘　　要：For the in-memory computation architecture,a ferroelectric semiconductor field-effect transistor(FeSFET)incorporates ferroelectric material into the FET channel to realize logic and memory in a single device.The emerging groupⅢnitride material Al_(1-x)Sc_(x)N provides an excellent platform to explore FeSFET,as this material has significant electric polarization,ferroelectric switching,and high carrier mobility.However,steps need to be taken to reduce the large band gap of~5 eV of Al_(1-x)Sc_(x)N to improve its transport property for in-memory logic applications.By state-of-the-art first principles analysis,here we predict that alloying a relatively small amount(less than~5%)of Sb impurities into Al_(1-x)Sc_(x)N very effectively reduces the band gap while maintaining excellent ferroelectricity.We show that the co-doped Sb and Sc act cooperatively to give a significant band bowing leading to a small band gap of~1.76 eV and a large polarization parameter~0.87 C/m^(2),in the quaternary Al_(1-x)Sc_(x)Sb_(y)N_(1-y)compounds.The Sb impurity states become more continuous as a result of interactions with Sc and can be used for impurity-mediated transport.Based on the Landau-Khalatnikov model,the Landau parameters and the corresponding ferroelectric hysteresis loops are obtained for the quaternary compounds.These findings indicate that Al_(1-x)Sc_(x)Sb_(y)N_(1-y)is an excellent candidate as the channel material of FeSFET.

关 键 词：FERROELECTRICITY Al_(1-x)Sc_(x)N FeSFET 

分 类 号：TN386[电子电信—物理电子学]