Reliability modelling and assessment of CMOS image sensor under radiation environment  

作　　者：Zhao TAO Wenbin CHEN Xiaoyang LI Rui KANG 

机构地区：[1]School of Reliability and Systems Enginering,Beihang University,Bejing 00191,China [2]Science and Technologyon Reliabiliy and Environmental Engineering Laboratory,Beijing 100191,China

出　　处：《Chinese Journal of Aeronautics》2024年第9期297-311,共15页中国航空学报（英文版）

基　　金：the National Natural Science Foundation of China (No.51775020);the Science Challenge Project,China (No.TZ2018007);the National Natural Science Foundation of China (No.62073009);the Fundamental Research Funds for Central Universities,China (No.YWF-19-BJ-J-515).

摘　　要：The Complementary Metal-Oxide Semiconductor(CMOS)image sensor is a critical component with the function of providing accurate positioning in many space application systems.Under long-time operation in space environments,there are radiation related degradation and var-ious uncertainties affecting the positioning accuracy of CMOS image sensors,which further leads to a reliability reduction of CMOS image sensors.Obviously,the reliability of CMOS image sensors is related to their specified function,degradation,and uncertainties;however,current research has not fully described this relationship.In this paper,a comprehensive approach to reliability modelling of CMOs image sensors is proposed based on the reliability science principles.Firstly,the perfor-mance margin modelling of centroid positioning accuracy is conducted.Then,the degradation model of CMOS image sensors is derived considering the dark current increase induced by the total ionizing dose effects.Finally,various uncertainties are analyzed and quantified,and the measure-ment equation of reliability is proposed.A case study of a CMOS image sensor is conducted to apply the proposed method,and the sensitivity analysis can provide suggestions for design and use of CMOS image sensors to ensure reliability.A simulation study is conducted to present the advantages oftheproposed comprehensive approach.

关 键 词：Complementary metal-oxide semiconductor image sensor Degradation RELIABILITY Reliability science principles Total ionizingdose effects Uncertainty analysis 

分 类 号：V443[航空宇航科学与技术—飞行器设计]