Enhanced Electrical Properties of Bi_(2−x)Sb_(x)Te_(3) Nanoflake Thin Films Through Interface Engineering  

作　　者：Xudong Wu Junjie Ding Wenjun Cui Weixiao Lin Zefan Xue Zhi Yang Jiahui Liu Xiaolei Nie Wanting Zhu Gustaaf Van Tendeloo Xiahan Sang 

机构地区：[1]State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology,Wuhan 430070,China [2]NRC(Nanostructure Research Centre),Wuhan University of Technology,Wuhan 430070,China [3]EMAT(Electron Microscopy for Materials Science),University of Antwerp,Groenenborgerlaan 171,Antwerp 2023,Belgium

出　　处：《Energy & Environmental Materials》2024年第6期359-366,共8页能源与环境材料（英文）

基　　金：supported by the National Natural Science Foundation of China(52272235);supported by the Fundamental Research Funds for the Central Universities(WUT:2021III016GX).

摘　　要：The structure–property relationship at interfaces is difficult to probe for thermoelectric materials with a complex interfacial microstructure.Designing thermoelectric materials with a simple,structurally-uniform interface provides a facile way to understand how these interfaces influence the transport properties.Here,we synthesized Bi_(2−x)Sb_(x)Te_(3)(x=0,0.1,0.2,0.4)nanoflakes using a hydrothermal method,and prepared Bi_(2−x)Sb_(x)Te_(3) thin films with predominantly(0001)interfaces by stacking the nanoflakes through spin coating.The influence of the annealing temperature and Sb content on the(0001)interface structure was systematically investigated at atomic scale using aberration-corrected scanning transmission electron microscopy.Annealing and Sb doping facilitate atom diffusion and migration between adjacent nanoflakes along the(0001)interface.As such it enhances interfacial connectivity and improves the electrical transport properties.Interfac reactions create new interfaces that increase the scattering and the Seebeck coefficient.Due to the simultaneous optimization of electrical conductivity and Seebeck coefficient,the maximum power factor of the Bi_(1.8)Sb_(0.2)Te_(3) nanoflake films reaches 1.72 mW m^(−1)K^(−2),which is 43%higher than that of a pure Bi_(2)Te_(3) thin film.

关 键 词：Bi_(2)Te_(3) nanoflakes interface engineering scanning transmission electron microscopy thermoelectric thin film 

分 类 号：TB383[一般工业技术—材料科学与工程]