Ballistic 2D MoS_(2)transistors with ultra-high on-state currents  

超高开态电流的二维MoS_(2)弹道晶体管

作　　者：Ying Li Zongmeng Yang Qiuhui Li Jichao Dong Jing Lu 黎颖;杨宗蒙;李秋卉;董济超;吕劲(State Key Laboratory for Mesoscopic Physics and Department of Physics,Peking University,Beijing 100871,China;Collaborative Innovation Center of Quantum Matter,Beijing 100871,China;Beijing Key Laboratory for Magnetoelectric Materials and Devices,Beijing 100871,China;Peking University Yangtze Delta Institute of Optoelectronics,Nantong 226000,China;Key Laboratory for the Physics and Chemistry of Nanodevices,Peking University,Beijing 100871,China)

机构地区：[1]State Key Laboratory for Mesoscopic Physics and Department of Physics,Peking University,Beijing 100871,China [2]Collaborative Innovation Center of Quantum Matter,Beijing 100871,China [3]Beijing Key Laboratory for Magnetoelectric Materials and Devices,Beijing 100871,China [4]Peking University Yangtze Delta Institute of Optoelectronics,Nantong 226000,China [5]Key Laboratory for the Physics and Chemistry of Nanodevices,Peking University,Beijing 100871,China

出　　处：《Science China Materials》2024年第10期3083-3086,共4页中国科学（材料科学）（英文版）

基　　金：supported by the National Key R&D Program of China(2022YFA1203904);the National Natural Science Foundation of China(12274002,11804140,and 91964101);the High-Performance Computing Platform of Peking University。

摘　　要：According to the International Roadmap for Devices and Systems(IRDS),the physical scaling limit for the gate length of bulk silicon field-effect transistors(FETs)is 12 nm(Lg=12 nm)with a 42-nm gate pitch[1].Further miniaturization of silicon-based FETs beyond this point would result in significant interface scattering,which would reduce carrier mobility and consequently degrade device performance[2].To continue the scaling prescribed by Moore’s Law,the adoption of novel materials is imperative.Due to their atomic-scale thickness and smooth surfaces free of dangling bonds,two-dimensional(2D)semiconductors maintain both good electrostatics and relatively high carrier mobility even in the sub-10-nm gate length FETs[2–5].Extensive first-principle quantum transport calculations have shown that 2D material FETs exhibit high on-state currents and meet the requirements of commercial integrated circuits at sub-10-nm gate lengths[6–9].实验上已成功制备了沟道长度为10–20 nm的MoS_(2)弹道输运晶体管其有效氧化层厚度为0.4 nm通过钇(Yttrium)掺杂诱导MoS_(2)相变实现了范德瓦尔斯欧姆接触.这些晶体管在0.7 V的低供应电压下表现出1.22 mAμm^(−1)的开态电流3.2 mSμm^(−1)的跨导80%的弹道率以及低于117Ωμm的接近理论极限的接触电阻.这一工作超越了之前MoS_(2)晶体管的实验指标并满足了商用集成电路的性能标准展示了二维材料作为下一代晶体管沟道材料的巨大潜力.

关 键 词：SCATTERING SCALING STATE 

分 类 号：TN32[电子电信—物理电子学]