Elongated antiferromagnetic skyrmion in two-dimensional RuF_(4)  

二维RuF_(4)中拉长的反铁磁斯格明子

作　　者：Mu Lan Rong Wang Shihao Wei Lezhong Li Wenning Ren Xing Zhang Xi Zhang Gang Xiang 兰木;王蓉;魏世豪;李乐中;任文宁;张星;张析;向钢(College of Optoelectronic Engineering,Chengdu University of Information Technology,Chengdu 610225,China;Hangzhou Innovation Center,Zhejiang University,Hangzhou 311200,China;College of Physics,Sichuan University,Chengdu 610064,China)

机构地区：[1]College of Optoelectronic Engineering,Chengdu University of Information Technology,Chengdu 610225,China [2]Hangzhou Innovation Center,Zhejiang University,Hangzhou 311200,China [3]College of Physics,Sichuan University,Chengdu 610064,China

出　　处：《Science China Materials》2024年第10期3282-3287,共6页中国科学（材料科学）（英文版）

基　　金：supported by the National Key Research and Development Program of China(MOST)(2022YFA1405100);the National Natural Science Foundation of China(NSFC)(52172272);the Scientific Research Foundation of CUIT(KYTZ202172).

摘　　要：Two-dimensional(2D)antiferromagnetic(AFM)skyrmions are free from stray magnetic field and skyrmion Hall effect,and can be driven by a small current density up to a high speed,desirable for low-power spintronic applications.However,most 2D AFM skyrmions are realized in complex heterostructured materials,which impedes the dense integration of spintronic devices.Here,we propose that 2D AFM skyrmions can be achieved in ruthenium tetrafluoride(RuF_(4))monolayer using hybrid functional theory combined with atomistic spin dynamics simulations.Our study indicates that 2D RuF_(4)is dynamically stable and its nondegenerate vibration modes in optical branches are either Raman or infrared active.Furthermore,2D RuF_(4)acts as an indirect bandgap semiconductor with an out-of-plane AFM state.Notably,the presence of a weak Dzyaloshinskii-Moriya interaction in 2D RuF_(4)leads to a spin spiral ground state at low temperatures,enabling the formation of AFM skyrmions with possible length modulation by an external magnetic field.Our results give insight into 2D RuF_(4)and may provide an intriguing platform for 2D AFM skyrmion-based spintronic applications.二维反铁磁斯格明子不受杂散磁场和斯格明子霍尔效应的影响,并且可以通过小电流密度实现高速驱动,这对于低功耗自旋电子应用是理想的.然而,大多数二维反铁磁斯格明子需要在复杂的异质结构材料中实现,这阻碍了自旋电子设备的高度集成.本文中,我们使用杂化泛函理论计算和原子自旋动力学模拟,在四氟化钌(RuF_(4))单层中实现二维反铁磁斯格明子.我们的研究表明,二维RuF_(4)具有动力学稳定性,其非简并振动模式在光学分支中要么具有红外活性要么具有拉曼活性.此外,二维RuF_(4)作为间接带隙半导体,具有垂直于平面的反铁磁状态.值得注意的是,二维RuF_(4)中的弱Dzyaloshinskii-Moriya相互作用在低温下导致自旋螺旋基态,使得通过外部磁场可能对长度进行调制,形成具有反铁磁斯格明子.我们的研究结果有助于深入了解二维RuF_(4),并为基于二维反铁磁斯格明子的高集成和低功耗自旋电子学应用提供了一个有趣的平台.

关 键 词：TWO-DIMENSIONAL antiferromagnetic skyrmion density functional theory spin dynamics magnetic field modulation 

分 类 号：O641.1[理学—物理化学] O469[理学—化学]