Highly ordered inkjet-printed quantum-dot thin films enable efficient and stable QLEDs with EQE exceeding 23%  

作　　者：Changting Wei Bo Xu Meng Zhang Zhenhuang Su Jiawei Gu Wenrui Guo Xingyu Gao Wenming Su Zheng Cui Seokwoo Jeon Zhiyong Fan Haibo Zeng 

机构地区：[1]MIIT Key Laboratory of Advanced Display Materials and Devices,Institute of Optoelectronics&Nanomaterials,School of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China [2]Ningbo Nato New Material Technology Co.,Ltd,Ningbo 315600,China [3]Shanghai Synchrotron Radiation Facility(SSRF),Zhangjiang Laboratory,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201204,China [4]School of Mechanical Engineering,Jiangsu University,Zhenjiang 212013,China [5]Printable Electronics Research Center,Nano Devices and Materials Division,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [6]Department of Materials Science and Engineering,Korea University,Seoul 02841,South Korea [7]Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology,Hong Kong 999077,China

出　　处：《eScience》2024年第3期152-162,共11页电化学与能源科学（英文）

基　　金：This work was supported by NSFC(Nos.62261160392,52131304,61725402,U1605244,22279059);the Fundamental Research Funds for the Central Universities(Nos.30921011106,30919012107);the Research Innovation Program of Nanjing Overseas Returnees(No.AD411025);the start-up funding from the Nanjing University of Science and Technology,the Jiangsu Funding Program for Excellent Postdoctoral Talent(No.2023ZB844);the China Postdoctoral Science Foundation(No.2023M731687);The authors are also thankful for the support from the NJUST large instrument equipment open fund and Vacuum Interconnect Nano X Research Facility(NANO-X)of Suzhou Institute of Nano-Tech and Nano-Bionics,CAS.

摘　　要：Inkjet-printed quantum dot light-emitting diodes(QLEDs)are emerging as a promising technology for next-generation displays.However,the progress in fabricating QLEDs using inkjet printing technique has been slower compared to spin-coated devices,particularly in terms of efficiency and stability.The key to achieving high performance QLEDs lies in creating a highly ordered and uniform inkjet-printed quantum dot(QD)thin film.In this study,we present a highly effective strategy to significantly improve the quality of inkjet-printed CdZnSe/CdZnS/ZnS QD thin films through a pressure-assisted thermal annealing(PTA)approach.Benefiting from this PTA process,a high quality QD thin film with ordered packing,low surface roughness,high photoluminescence and excellent electrical property is obtained.The mechanism behind the PTA process and its profound impact on device performance have been thoroughly investigated and understood.Consequently,a record high external quantum efficiency(EQE)of 23.08%with an impressive operational lifetime(T50)of up to 343,342h@100cdm−2,and a record EQE of 22.43%with T50 exceeding to 1,500,463h@100cdm−2 are achieved in inkjet-printed red and green CdZnSe-based QLEDs,respectively.This work highlights the PTA process as an important approach to realize highly efficient and stable inkjet-printed QLEDs,thus advancing QLED technology to practical applications.

关 键 词：Inkjet printing Quantum dot light-emitting diode High efficiency Thermal annealing Highly ordered 

分 类 号：TN312.8[电子电信—物理电子学]