Stacking order modulated anomalous valley Hall effect in antiferromagnetic MXene  

作　　者：Tong Zhao Shucheng Xing Jian Zhou Naihua Miao Zhimei Sun 

机构地区：[1]School of Materials Science and Engineering,Beihang University,Beijing,100191,China [2]Center for Integrated Computational Materials Engineering,International Research Institute for Multidisciplinary Science,Beihang University,Beijing,100191,China

出　　处：《Journal of Materiomics》2024年第1期269-276,共8页无机材料学学报（英文）

基　　金：supported by the National Key Research and Development Program of China(2022YFB3807200);National Natural Science Foundation of China(52222101).

摘　　要：The valley index is a promising degree of freedom for information processing in electronic devices.However,the researches on valley polarization are mainly focused on ferromagnetic order,which breaks the time reversal symmetry simultaneously.Here,a novel paradigm for achieving stacking order modulated anomalous valley Hall(AVH)effect is proposed in antiferromagnetic monolayers.The paradigm involves the introduction and reversal of nonuniform potentials by modulating the position of substrate,to break the combined symmetry of spatial inversion and time reversal(PT symmetry)and achieve stacking-dependent valley spin splitting.Based on first-principles calculations,we discover spontaneous valley polarization in antiferromagnetic Cr_(2)CH_(2) MXene and stacking-dependent valley spin splitting in Cr_(2)CH_(2)/Sc_(2)CO_(2) heterostructure.Furthermore,switching the ferroelectric polarization of monolayer Sc_(2)CO_(2) results in a semiconductor-metal transition in Cr_(2)CH_(2)/Sc_(2)CO_(2),accompanied by the disappearance of valley physics.Our findings provide an alternative way to develop controllable valleytronics devices based on antiferromagnetic monolayers.

关 键 词：Stacking order ANTIFERROMAGNETISM AVH effect Electrical control 

分 类 号：O57[理学—粒子物理与原子核物理]