Remarkable average thermoelectric performance of the highly oriented Bi(Te,Se)-based thin films and devices  

作　　者：Zhiliang Li Xiaoqi Yang Zhi Gao Jingxuan Wang Yuli Xue Jianglong Wang Qian Cao Zhihai Ding Shufang Wang 

机构地区：[1]Hebei Key Lab of Optic-Electronic Information and Materials,Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei Province,College of Physics Science and Technology,Hebei University,Baoding,071002,China [2]Huabei Cooling Device Co.,Ltd,Xianghe,065400,China

出　　处：《Journal of Materiomics》2024年第2期366-376,共11页无机材料学学报（英文）

基　　金：supported by the National Natural Science Foundation of China(51972094);Hebei Provincial Department of Science and Technology(206Z4403G);Innovation Team Project of Hebei University(No.150000321008,521201623004);supported in part by the Microanalysis Center and the High-Performance Computing Center of Hebei University.

摘　　要：Bi(Te,Se)-based compounds have attracted lots of attention for nearly two centuries as one of the most successful commercial thermoelectric(TE)materials due to their high performance at near room tem-perature.Compared with 3D bulks,2D thin films are more compatible with modern semiconductor technology and have unique advantages in the construction of micro-and nano-devices.For device applications,high average TE performance over the entire operating temperature range is critical.Herein,highly c-axis-oriented N-type Bi(Te,Se)epitaxial thin films have been successfully prepared using the pulsed laser deposition technology by adjusting the deposition temperature.The film deposited at~260℃demonstrate a remarkable average power factor(PFave)of~24.4 mW·cm^(-1)·K^(-2)over the tem-perature range of 305e470 K,higher than most of the state-of-the-art Bi(Te,Se)-based films.Moreover,the estimated average zT value of the film is as high as~0.81.We then constructed thin-film TE devices by using the above oriented Bi(Te,Se)films,and the maximum output power density of the device can reach up to~30.1 W/m^(2)under the temperature difference of 40 K.Predictably,the outstanding average TE performance of the highly oriented Bi(Te,Se)thin films will have an excellent panorama of applications in semiconductor cooling and power generation.

关 键 词：Bismuth telluride Oriented thin film Thermoelectric device Average power factor Output power density 

分 类 号：O48[理学—固体物理]