Enhanced piezoelectricity of Cu-doped K(Ta,Nb)O_(3) single crystals  

作　　者：Fulin Zhang Songtao Fan Yingxu Zhu Wendie Chen Bing Liu Yuguo Yang Limei Zheng Yuanyuan Zhang Xianshun Lv Xuping Wang 

机构地区：[1]Advanced Materials Institute,Qilu University of Technology(Shandong Academy of Sciences),Jinan,250014,China [2]Qilu University of Technology(Shandong Academy of Sciences),Advanced Materials Institute,Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences,Jinan,250014,China [3]School of Physics,Shandong University,Jinan,250100,China

出　　处：《Journal of Materiomics》2024年第5期1017-1025,共9页无机材料学学报（英文）

基　　金：This work was supported by the General Program of National Natural Science Foundation of China(52072189,52072218);Natural Science Foundation of Shandong Province(ZR2021ME084,ZR2021QE199);Studio for the Leader of Scientific Research in Jinan(2021GXRC089);the Project for Introduced Innovation Team in Jinan,China(2020GXRC037);Major Innovation Project for Integrating Science,Education&Industry of Qilu University of Technology(Shandong Academy of Sciences)(2022PYI015,2022PY030,2023PY062,2023PX040,2022JBZ01-07).

摘　　要：As a class of solid solution material,K(Ta,Nb)O3(KTN)single crystals have attracted significant interest due to their excellent piezoelectric and electro-optic performance.In this study,the piezoelectric properties of KTN were improved through Cu doping.Utilizing the advantages of composition-regulating phase transition,a large,high-quality Cu:KTN crystal measuring 30 mm×25 mm×20 mm in size was grown using the improved top seeded solution growth method.Cu-doped KTN exhibited better piezoelectric properties than pure KTN,and the full matrix parameters were investigated.Excellent dielectric,piezoelectric,and electromechanical coupling responses(ε^(T)_(11)-2,136,d_(33)∼303 pC/N,k_(t)∼0.515,and k33∼0.672)were successfully obtained.To realize the optimized orientation of the piezoelectric properties,the orientation dependence of the single domain properties was investigated,and the mechanism of Cu doping to improve piezoelectric properties was explored.We found that 0.36%(in mass)Cu doped crystal consisted of A-site substitution,following ferroelectric and domain analysis.The small ferroelectric domain sizes led to a large domain wall mobility rate and high domain wall density,which contributed to high piezoelectric properties.This work revealed the effect of A-position doping on piezoelectric properties and provided a theoretical and experimental foundation for the performance optimization of KTN-based materials.

关 键 词：Solid solution material Lead-free piezoelectric Enhanced piezoelectricity 

分 类 号：TG14[一般工业技术—材料科学与工程]