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作 者:Romteera Chueachot Ronariddh Nakhowong
机构地区:[1]Functional Nanomaterials and Advanced Thermoelectric Materials Research Laboratory,Faculty of Science,Ubon Ratchathani Rajabhat University,Ubon Ratchathani,34000,Thailand [2]Program of Chemistry,Faculty of Science,Ubon Ratchathani Rajabhat University,Ubon Ratchathani,34000,Thailand [3]Program of Physics,Faculty of Science,Ubon Ratchathani Rajabhat University,Ubon Ratchathani,34000,Thailand
出 处:《Journal of Materiomics》2024年第5期1091-1100,共10页无机材料学学报(英文)
基 金:This research has received funding support from the National Science,Research and Innovation Fund(NSRF)via the Program Management Unit for Human Resources&Institutional Development,Research and Innovation[grant number B05F640150],Thailand.
摘 要:Bismuth antimony telluride(Bi_(2–x)Sb_(x)Te_(3))is commonly used for thermoelectric generation at temperatures near ambient temperature.Here,we report incorporating reduced graphene oxide(rGO)and Cu_(2)Se_(0.98)Te_(0.02) into the Bi_(0.5)Sb_(1.5)Te_(3)(BST)(rGO/Bi_(0.5)Sb_(1.5)Te_(3-x)Cu_(2)Se_(0.98)Te_(0.02),where x=0.0%,0.1%,0.3%,0.5% and 1.0%,in mass)synthesized by a solid-state technique.The dispersion of rGO and Cu_(2)Se_(0.98)Te_(0.02) into the BST matrix improved carrier transport properties at the grain boundary interfaces and reduced thermal conductivity.Strong electron scattering at large interface barriers was responsible for increased electrical conductivity.The bulk sample of rGO/BST-0.3%Cu_(2)Se_(0.98)Te_(0.02)(in mass)possessed a low thermal conductivity of 0.76 W·m^(−1)·K^(−1) at 497 K.Enhanced phonon scattering at grain boundaries between BST and rGO/Cu_(2)Se_(0.98)Te_(0.02) caused a low thermal conductivity.At 448 K,the highest zT value for rGO/BST-0.3% Cu_(2)Se_(0.98)Te_(0.02)(in mass)was 1.64,which is 37% higher than the zT value for pure BST(zT=1.19).Results suggested that incorporating rGO and Cu_(2)Se_(0.98)Te_(0.02) into the BST matrix effectively improved thermoelectric power generation.
关 键 词:Bismuth telluride Copper selenide Reduced graphene oxide Energy-filtering effect Phonon scattering
分 类 号:TB33[一般工业技术—材料科学与工程]
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