On the Path to High-Temperature Josephson Multi-Junction Devices  

作　　者：Xu Wang Fucong Chen Zefeng Lin Shibing Tian Chunguang Li Victor Kornev Nikolay Kolotinskiy 

机构地区：[1]Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]Faculty of Physics,Lomonosov Moscow State University,Moscow 119991,Russia

出　　处：《Electromagnetic Science》2024年第3期71-78,共8页电磁科学（英文）

基　　金：supported by the National Key R&D Program of China(Grant No.2022YFA1603900);in part by the Russian Science Foundation(RSCF)(Grant No.19-72-10016-P).

摘　　要：We report our progress in the high-temperature superconductor(HTS)Josephson junction fabrication process founded on utilizing a focused helium ion beam damaging technique and discuss the expected device performance attainable with the HTS multi-junction device technology.Both the achievable high value of characteristic voltage V_(C)=I_(C)R_(N)of Josephson junctions and the ability to design a large number of arbitrary located Josephson junctions allow narrowing the existing gap in design abilities for lowtemperature superconductor(LTS)and HTS circuits even with using a single YBa_(2)Cu_(3)O_(7-x) film layer.A one-layer topology of active electrically small antenna is suggested and its voltage response characteristics are considered.

关 键 词：Josephson junctions High-temperature superconductors YBa_(2)Cu_(3)O_(7-x)(YBCO) Focused helium ion beam fabrication technique Josephson multi-junction devices Superconducting quantum interference device Active electrically small antenna 

分 类 号：O51[理学—低温物理]