Thinner 2D α-MoO_(3) makes setting up memristors easier  

作　　者：Yukun Hong Shangui Lan Baojun Pan Zhixiang Zhang Bingbing Chen Lijie Zhang Peijian Wang 

机构地区：[1]Key Laboratory of Carbon Materials of Zhejiang Province,College of Chemistry and Materials Engineering,Wenzhou University,Wenzhou,325035,Zhejiang,China [2]Institute of New Materials&Industrial Technologies,Wenzhou University,Wenzhou 325024,China [3]ZJU-Hangzhou Global Scientific and Technological Innovation Center,Zhejiang University,Hangzhou,311215,China [4]Macao Institute of Materials Science and Engineering(MIMSE),MUST-SUDA Joint Research Center for Advanced Functional Materials,Macao University of Science and Technology,Taipa,999078,Macao,China [5]Department of Energy Science and Engineering,Nanjing Tech University,Nanjing,210009,China

出　　处：《Journal of Materiomics》2024年第6期1279-1289,共11页无机材料学学报（英文）

基　　金：The authors acknowledge the support from National Natural Science Foundation of China(Grant Nos.51902061,52072272,62090031).

摘　　要：Two-dimensional(2D)metal oxide α-MoO_(3) shows great potentials because of its very high dielectric constant,air stability and anisotropic phonon polaritons.However,a method to produce ultrathin single crystallineα-MoO_(3) with high transferability for functional device architecture is lacking.Herein,we report on the controllable synthesis of ultrathinα-MoO_(3) single crystals via chemical vapor deposition(CVD)assisted by plasma pretreatment.We also carried out systematic computational work to explicate the mechanism for the slantly-oriented growth of thin nanosheets on plasma-pretreated substrate.The method possesses certain universality to synthesize other ultrathin oxide materials,such as Bi_(2)O_(3) and Sb_(2)O_(3) nanosheets.As-grownα-MoO_(3) presents a high dielectric constant(≈40),ultrathin thickness(≈3 nm)and high transferability.Memristors withα-MoO_(3) as the functional layers show excellent performance featuring high on/off ratio of approximately 104,much lower set voltage around 0.5 V,and highly repetitive voltage sweep endurance.The power consumption of MoO_(3) memristors is significantly reduced,resulted from reduced thickness of the MoO_(3) nanosheets.Single crystal ultrathinα-MoO_(3) shows great potentials in post-Moore memristor and the synthesis of CVD assisted by plasma pretreatment approach points to a new route for materials growth.

关 键 词：Ultrathin molybdenum trioxide Thickness controlling High transferability MEMRISTOR Low power consumption 

分 类 号：TQ17[化学工程—硅酸盐工业]