高亮绿光氮化镓基Micro-LED微型显示器制备  

Fabrication of GaN-based Micro-LED Green Micro-display with High Brightness

作　　者：张杰 王光华 邓枫[1] 杨文运 高思博 鲁朝宇[1] 孟泽阳 高树雄 常诚 曹坤宇 马赛江[1] 刘颖琪 王丽琼 ZHANG Jie;WANG Guanghua;DENG Feng;YANG Wenyun;GAO Sibo;LU Chaoyu;MENGZeyang;GAO Shuxiong;CHANG Cheng;CAO Kunyu;MA Saijiang;LIU Yingqi;WANG Liqiong(Yunnan Olightek Opto-electronic Technology Co.Ltd.,Kunming 650223,China;Kunming Institute of Physics,Kunming 650223,China;School of Materials and Energy,Yunnan University,Kunming 650500,China)

机构地区：[1]云南北方奥雷德光电科技股份有限公司,云南昆明650223 [2]昆明物理研究所,云南昆明650223 [3]云南大学材料与能源学院,云南昆明650500

出　　处：《红外技术》2024年第10期1186-1191,共6页Infrared Technology

基　　金：云南省省市一体化重大科技专项(202202AH210001);云南省院士专家工作站(202205AF150076)。

摘　　要：Micro-LED作为一种新型的显示技术,具有对比度高、响应快及寿命长等优点,已成为当前研究的热点。然而,尽管潜力巨大,Micro-LED技术的商业化之路仍面临诸多技术上的挑战与瓶颈。本文旨在探讨高亮绿光氮化镓基Micro-LED微型显示器的制备过程及其相关技术。基于WVGA041全数字信号电路CMOS硅基驱动电路,制作了0.41 inch、分辨率为800×480的主动式单色绿光Micro-LED微型显示器。利用高精度倒装焊接技术实现了CMOS驱动电路与LED发光芯片的电气连接。结果表明,制备出LED显示芯片正常启亮电压为2.8V,EL光谱峰值波长524nm;在硅基CMOS电路驱动范围内,Micro-LED微型显示器在5V电压下,器件亮度为108000cd/m^(2)(最大亮度可达250000 cd/m^(2)),电流密度达到0.61A/cm^(2)时色坐标为(0.175,0.756)。当电流密度从0.3A/cm^(2)增加到1.3A/cm^(2)时,色坐标从(0.178,0.757)变化到(0.175,0.746),器件的色稳定性能够满足实际应用要求。Micro-LEDs are a new display technology with advantages including high contrast,fast response,and long lifetimes.Micro-LEDs are currently regarded as an active topic of research.Micro-LED display technology is a promising industry,but its commercialization faces many technical challenges and bottlenecks.This study explores the diode preparation process and related technologies for high-brightness,green-light,GaN-based micro-LED micro-displays.Monochrome green micro-LEDs with resolutions of 800×480 and 0.41 in were fabricated based on the CMOS driver circuit of an all-digital signal circuit.The CMOS driver circuit was connected to an LED chip via high-precision flip bonding.The experimental results showed that the turn-on voltage of the LED was 2.8 V and that the peak wavelength of the electroluminescence spectrum was 524 nm.The maximum brightness of the device can reach 250,000 cd/m^(2) within the normal driving range of silicon-based CMOS circuits,and the brightness can reach 108,000 cd/m^(2) at 5 V.When the current density was controlled at 0.61 A/cm^(2),the CIE coordinates were(0.175,0.756).When the current density was increased from 0.3 A/cm^(2) to 1.3 A/cm^(2),the CIE coordinates changed from(0.178,0.757)to(0.175,0.746).The color stability of the device met the requirements for practical applications.

关 键 词：micro-LED 微型显示器 高亮单色绿光发光二级管 

分 类 号：TN312[电子电信—物理电子学]