Ultrafast laser-induced decomposition for selective activation of GaAs  

作　　者：Ke-Mi Xu Chao Liu Lei Wang Feng-Chun Pang Xin-Jing Zhao Xian-Bin Li Qi-Dai Chen Wei-Qian Zhao 

机构地区：[1]MIIT Key Laboratory of Complex-field Intelligent Exploration,School of Optics and Photonics,Beijing Institute of Technology,Beijing,100081,China [2]State Key Laboratory of Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,2699 Qianjin Street,Changchun 130012,China

出　　处：《Light(Advanced Manufacturing)》2024年第2期87-94,共8页光（先进制造）（英文）

基　　金：Program of Shandong Province(2021CXGC010201);National Natural Science Foundation of China(61827826,62175086,62205024);Natural Science Foundation of Jilin Province(20220101107JC).All the authors thank Prof.Saulius Juodkazis and Prof.Hong-Bo Sun for their valuable discussions and advice on draft preparation.

摘　　要：The manipulation of micro/nanostructures to customise their inherent material characteristics has garnered considerable attention.In this study,we present the selective activation of gallium arsenide(GaAs)via ultrafast laser-induced decomposition,which correlates with the emergence of ripples on the surface.This instigated a pronounced enrichment in the arsenic(As)concentration around the surface while inducing a depletion of gallium(Ga)at the structural depth.Theoretical simulations based on first principles exhibited a robust inclination towards the phase separation of GaAs,with the gasification of As-As pairs proving more facile than that of Ga-Ga pairs,particularly above the melting point of GaAs.As an illustrative application,a metal-semiconductor hybrid surface was confirmed,showing surface chemical bonding and surface-enhanced Raman scattering(SERS)through the reduction of silver ions on the laser-activated pattern.This laser-induced selective activation holds promise for broader applications,including the controlled growth of Pd and the development of Au/Ag alloy-based platforms,and thereby opens innovative avenues for advancements in semiconductors,solar cell technologies,precision sensing,and detection methodologies.

关 键 词：Laser-induced activation DECOMPOSITION Laser-induced ripples Reduction SERS 

分 类 号：TN24[电子电信—物理电子学]