Carbon-based memristors for resistive random access memory and neuromorphic applications  

作　　者：Fan Yang Zhaorui Liu Xumin Ding Yang Li Cong Wang Guozhen Shen 

机构地区：[1]School of Electronic and Information Engineering,Harbin Institute of Technology,Harbin 150001,China [2]School of Information Science and Engineering,University of Jinan,Jinan 250022,China [3]School of Instrumentation Science and Engineering,Harbin Institute of Technology,Harbin 150001,China [4]School of Integrated Circuits,Shandong University,Jinan 250101,China [5]School of Integrated Circuits and Electronics,Beijing Institute of Technology,Beijing 100081,China

出　　处：《Chip》2024年第2期11-44,共34页芯片（英文）

基　　金：supported in part by the National Key Research and Development Program of China under Grant 2021YFF0603500;in part by the National Nature Science Foundation of China under Grants 62174068,62311540155,and U22A2014;in part by the Shandong Provincial Natural Science Foundation of China under Grant(ZR2023ZD03);in part by the Jinan City University Integration Development Strategy Project under Grant(JNSX2023017).

摘　　要：As a typical representative of nanomaterials,carbon nanomaterials have attracted widespread attention in the construction of electronic devices owing to their unique physical and chemical properties,multi-dimensionality,multi-hybridization methods,and excellent electronic properties.Especially in the recent years,memristors based on carbon nanomaterials have flourished in the field of building non-volatile memory devices and neuromorphic applications.In the current work,the preparation methods and structural characteristics of carbon nanomaterials of different dimensions were systematically reviewed.Afterwards,in depth discussion on the structural characteristics and working mechanism of memristors based on carbon nanomaterials of different dimensions was conducted.Finally,the potential applications of carbon-based memristors in logic operations,neural network construction,artificial vision systems,artificial tactile systems,and multimodal perception systems were also introduced.It is believed that this paper will provide guidance for the future development of high-quality information storage,high-performance neuromorphic applications,and highsensitivity bionic sensing based on carbon-based memristors.

关 键 词：Carbon nanomaterials MEMRISTOR Resistive random access memory(RRAM) Neuromorphic device 

分 类 号：TN60[电子电信—电路与系统]