Silicon cross-coupled gated tunneling diodes  

作　　者：Zhenyun Tang Zhe Wang Zhigang Song Wanhua Zheng 

机构地区：[1]Laboratory of Solid-State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出　　处：《Chip》2024年第2期79-87,共9页芯片（英文）

基　　金：supported by the National Key Research and Development Program of China under Grant No.2021YFB2800304.

摘　　要：Tunneling-based static random-access memory(SRAM)devices have been developed to fulfill the demands of high density and low power,and the performance of SRAMs has also been greatly promoted.However,for a long time,there has not been a silicon based tunneling device with both high peak valley current ratio(PVCR)and practicality,which remains a gap to be filled.Based on the existing work,the current manuscript proposed the concept of a new silicon-based tunneling device,i.e.,the silicon crosscoupled gated tunneling diode(Si XTD),which is quite simple in structure and almost completely compatible with mainstream technology.With technology computer aided design(TCAD)simulations,it has been validated that this type of device not only exhibits significant negative-differential-resistance(NDR)behavior with PVCRs up to 10^(6),but also possesses reasonable process margins.Moreover,SPICE simulation showed the great potential of such devices to achieve ultralow-power tunneling-based SRAMs with standby power down to 10^(−12)W.

关 键 词：Low power Silicon-based tunneling device Negative differential resistance(NDR) Peak-to-valley current ratio(PVCR) TCAD simulation 

分 类 号：TN31[电子电信—物理电子学]