A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure  

作　　者：Ru Xu Peng Chen Xiancheng Liu Jianguo Zhao Tinggang Zhu Dunjun Chen Zili Xie Jiandong Ye Xiangqian Xiu Fayu Wan Jianhua Chang Rong Zhang Youdou Zheng 

机构地区：[1]The Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China [2]School of Electronic and Information Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China [3]Corenergy Semiconductor Incorporation,Suzhou 215600,China

出　　处：《Chip》2024年第1期35-42,共8页芯片（英文）

基　　金：supported by National Key R&D Project grant No.2022YFE0122700);National High-Tech R&D Project(grant No.2015AA033305);Jiangsu Provincial Key R&D Program(grant No.BK2015111);China Postdoctoral Science Foundation(grant No.2023M731583);Jiangsu Provincial Innovation and Entrepreneurship Doctor Program,the Research and Development Funds from State Grid Shandong Electric Power Company and Electric Power Research Institute.

摘　　要：GaN power electronic devices,such as the lateral AlGaN/GaN Schottky barrier diode(SBD),have received significant attention in recent years.Many studies have focused on optimizing the breakdown voltage(BV)of the device,with a particular emphasis on achieving ultra-high-voltage(UHV,>10 kV)applications.However,another important question arises:can the device maintain a BV of 10 kV while having a low turn-on voltage(V_(on))?In this study,the fabrication of UHV AlGaN/GaN SBDs was demonstrated on sapphire with a BV exceeding 10 kV.Moreover,by utilizing a doublebarrier anode(DBA)structure consisting of platinum(Pt)and tantalum(Ta),a remarkably low Von of 0.36 V was achieved.This achievement highlights the great potential of these devices for UHV applications.

关 键 词：AlGaN/GaN Schottky barrier diode Double-barrier anode Turn-on voltage Ultra-high-voltage 

分 类 号：TN31[电子电信—物理电子学]