Cooperative engineering the multiple radio-frequency fields to reduce the X-junction barrier for ion trap chips  

作　　者：Yarui Liu Zhao Wang Zixuan Xiang Qikun Wang Tianyang Hu Xu Wang 

机构地区：[1]College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China [2]Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen 518055,China [3]International Quantum Academy,Shenzhen 518048,China [4]Guangdong Provincial Key Laboratory of Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen 518055,China

出　　处：《Chip》2024年第1期55-63,共9页芯片（英文）

基　　金：supported from the Natural Science Foundation of Guizhou Province of China(Grants No.ZCKJ2021015);Guizhou Science Platform and Talent(Grants No.GCC[2023]090);supported by Guangdong Basic and Applied Basic Research Foundation(Grants No.2020A1515010864);the National Natural Science Foundation of China(Grants No.11904423).

摘　　要：With the increasing number of ion qubits and improving performance of sophisticated quantum algorithms,more and more scalable complex ion trap electrodes have been developed and integrated.Nonlinear ion shuttling operations at the junction are more frequently used,such as in the areas of separation,merging,and exchanging.Several studies have been conducted to optimize the geometries of the radio-frequency(RF)electrodes to generate ideal trapping electric fields with a lower junction barrier and an even ion height of the RF saddle points.However,this iteration is time-consuming and commonly accompanied by complicated and sharp electrode geometry.Therefore,high-accuracy fabrication process and high electric breakdown voltage are essential.In the current work,an effective method was proposed to reduce the junction’s pseudo-potential barrier and ion height variation by setting several individual RF electrodes and adjusting each RF voltage amplitude without changing the geometry of the electrode structure.The simulation results show that this method shows the same effect on engineering the trapping potential and reducing the potential barrier,but requires fewer parameters and optimization time.By combining this method with the geometrical shapeoptimizing,the pseudo-potential barrier and the ion height variation near the junction can be further reduced.In addition,the geometry of the electrodes can be simplified to relax the fabrication precision and keep the ability to engineer the trapping electric field in real-time even after the fabrication of the electrodes,which provides a potential all-electric degree of freedom for the design and control of the two-dimensional ion crystals and investigation of their phase transition.

关 键 词：Ion trap JUNCTION Ion shuttling Electrode optimization Pseudo-potential barrier 

分 类 号：O413[理学—理论物理]