室温辐射探测器用CdTe基化合物半导体晶体生长研究进展  

Advances in Crystal Growth of CdTe-based Compound Semiconductors for Room Temperature Radiation Detectors

作　　者：高攀登 俞鹏飞 刘文斐 赵世伟 韩召 GAO Pandeng;YU Pengfei;LIU Wenfei;ZHAO Shiwei;HAN Zhao(School of Materials Science and Engineering,Chang’an University,Xi’an 710064,China)

机构地区：[1]长安大学材料科学与工程学院,陕西西安710064

出　　处：《材料科学与工程学报》2024年第4期692-704,共13页Journal of Materials Science and Engineering

基　　金：陕西省重点研发项目(2022GY-358);中央高校基本科研业务费专项资金项目(300102310204)。

摘　　要：CdTe基化合物半导体材料由于具有较宽的带隙、良好的光电性质和电子传输性能,在室温辐射探测领域具有广阔的应用前景。其中CdTe、CdZnTe、CdMnTe和CdMgTe单晶具有优异的载流子传输特性被用作室温X射线和γ射线探测器。本文探讨了CdTe基晶体生长的离子性强,热导率差等难点。介绍了CdTe基晶体的生长方法,并综述了CdTe基晶体在室温辐射探测领域的研究进展。展望了CdTe基晶体的发展方向,为CdTe基化合物半导体晶体材料的应用提供了更丰富的想象空间。CdTe-based compound semiconductor materials have broad application prospects in the field of room-temperature radiation detection because of their wide band gaps,good photoelectric properties and electron transport performance.CdTe,CdZnTe,CdMnTe and CdMgTe single crystals have excellent carrier transport properties and are used as X-ray and γ-ray detectors at room temperature.The difficulties of crystal growth,such as strong ionic property and poor thermal conductivity of CdTe-based crystals,are discussed.The growth methods of CdTe-based crystals were introduced,and the latest research progress in the field of room temperaturer radiation detection was reviewed.Finally,the development direction of CdTe-based crystals was prospected,which provided more imagination space for the applications of CdTe-based compound semiconductor crystal materials.

关 键 词：CdTe基半导体晶体 物理性质 生长难点 晶体生长方法 

分 类 号：TN304.2[电子电信—物理电子学]