碳化硅吸波材料的原位反应法制备及其机理  

Preparation Process and Reaction Mechanism of Silicon Carbide Absorbing Materials by In-situ Reaction Method at High Temperature

作　　者：崔思凯 付广艳[1] 林立海 颜雨坤[2] 李处森[2] CUI Sikai;FU Guangyan;LIN Lihai;YAN Yukun;LI Chusen(School of Mechanical and Power Engineering,Shenyang University of Chemical Technology,Shenyang 110142,China;Shenyang National Research Center for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China)

机构地区：[1]沈阳化工大学机械与动力工程学院,沈阳110142 [2]中国科学院金属研究所沈阳材料科学国家研究中心,沈阳110016

出　　处：《材料研究学报》2024年第9期659-668,共10页Chinese Journal of Materials Research

摘　　要：使热解碳与硅粉分别在1800℃、2000℃和2200℃进行原位反应制备三种SiC材料,观察其微观形貌、物相和晶体结构并测试其电磁吸波性能,研究了原位反应温度对其吸波性能的影响。结果表明,在1800℃硅碳原位反应生成3C结构的β相SiC,在2000℃原位反应的蒸发—冷凝过程中β相SiC向6H结构的α相SiC转变。随着反应温度的提高相变加剧,α相SiC的比例随之提高,SiC材料对电磁波的介电损耗性能减弱,阻抗匹配性能也随之提高。原位反应温度不低于2000℃时生成的SiC材料,其介电损耗和阻抗匹配性能适当,是性能较好的吸波材料。Silicon carbide(SiC)as a kind of high temperature absorbing materials has great application potential,but its application range is limited due to high preparation cost.Herein,the SiC absorbing materials by in-situ reaction of pyrolytic carbon and silicon powder were prepared in vacuum at 1800℃,2000℃ and 2200℃ respectively,aiming to clarifying the relevant reaction mechanism so that to search the way for saving preparation cost.The microstructure,phase composition and electromagnetic properties of the three kinds of SiC materials were assessed.The results show that during the in-situ reaction of SiC preparation,the β-phase SiC with 3C crystallographic structure is formed at 1800℃,while at 2000℃ the β-phase SiC begins to transform into α-phase SiC with 6H crystallographic structure via evaporation and condensation processes.With the increase of the reaction temperature,the degree of phase trasformation reaction was gradually intensified.Spontaneously,the proportion of α phase SiC also increases gradually,and the dielectric loss ability of the corresponding SiC materials to electromagnetic waves is gradually weakened,the impedance matching performance is gradually improved.In brief,the prepared SiC material presents appropriate comprehensive performance of dielectric loss and impedance matching when the preparation temperature is set above≥2000℃,suitable for use as a wave absorbing material.The results show that it is feasible to prepare SiC absorbing materials with low preparation cost by insitu reaction method.

关 键 词：复合材料 碳化硅吸波材料 碳化硅相变 原位反应 吸波性能 

分 类 号：TB321[一般工业技术—材料科学与工程]