Theoretical Models on Interfacial Thermal Conductance of Nanoscale Solid Interfaces in Chips:A Mini Review  

作　　者：Zhicheng Zong Xiandong Chen Bin Yan Yelei Xie Jian Pang Guangyao Li Jiqiang Hu Zhipeng Wu Bo Li Haisheng Fang Nuo Yang 宗志成;陈显栋;严斌;谢业磊;庞健;李光耀;胡继强;吴志鹏;李博;方海生;杨诺(School of Energy and Power Engineering,Huazhong University of Science and Technology,Wuhan 430074,China;Department of Packaging and Testing Institution,Sanechips Technology Co.,Ltd.,Shenzhen 518055,China;State Key Laboratory of Mobile Network and Mobile Multimedia Technology,ZTE Corporation,Shenzhen 518055,China)

机构地区：[1]School of Energy and Power Engineering,Huazhong University of Science and Technology,Wuhan 430074,China [2]Department of Packaging and Testing Institution,Sanechips Technology Co.,Ltd.,Shenzhen 518055,China [3]State Key Laboratory of Mobile Network and Mobile Multimedia Technology,ZTE Corporation,Shenzhen 518055,China

出　　处：《Chinese Physics Letters》2024年第10期70-77,共8页中国物理快报（英文版）

基　　金：supported by the Department of Packaging and Testing Institution of Sanechips。

摘　　要：With the rapid increase in power density of electronic devices,thermal management has become urgent for the electronics industry.Controlling temperature in the back-end-of-line is crucial for maintaining the reliability of integrated circuits,where many atomic-scale interfaces exist.The theoretical models of interface thermal conductance not only accurately predict the values but also help to analyze the underlying mechanism.This review picks up and introduces some representative theoretical models considering interfacial roughness,elastic and inelastic processes,and electron–phonon couplings,etc.Moreover,the limitations and problems of these models are also discussed.

关 键 词：mechanism. ROUGHNESS LIMITATIONS 

分 类 号：TN40[电子电信—微电子学与固体电子学] TK124[动力工程及工程热物理—工程热物理]