Metal-to-insulator transition in oxide semimetals by anion doping  

作　　者：Haitao Hong Huimin Zhang Shan Lin Jeffrey A.Dhas Binod Paudel Shuai Xu Shengru Chen Ting Cui Yiyan Fan Dongke Rong Qiao Jin Zihua Zhu Yingge Du Scott A.Chambers Chen Ge Can Wang Qinghua Zhang Le Wang Kui-juan Jin Shuai Dong Er-Jia Guo 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing,China [2]Department of Physics&Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing,China [3]Key Laboratory of Quantum Materials and Devices of Ministry of Education,School of Physics,Southeast University,Nanjing,China [4]Materials Science and Technology Division,Oak Ridge National Laboratory,Oak Ridge,Tennessee,USA [5]Physical and Computational Sciences Directorate,Pacific Northwest National Laboratory,Richland,Washington,USA [6]School of Chemical,Biological and Environmental Engineering,Oregon State University,Corvallis,Oregon,USA [7]Beijing Advanced Innovation Center for Materials Genome Engineering,Department of Physical Chemistry,University of Science and Technology Beijing,Beijing,China [8]Environmental Molecular Sciences Laboratory,Pacific Northwest National Laboratory,Richland,Washington,USA [9]Songshan Lake Materials Laboratory,Dongguan,Guangdong,China

出　　处：《Interdisciplinary Materials》2024年第3期358-368,共11页交叉学科材料（英文）

基　　金：CAS Project for Young Scientists in Basic Research,Grant/Award Number:YSBR‐084;China Postdoctoral Science Foundation,Grant/Award Number:2022M723353;Jiangsu Funding Program for Excellent Postdoctoral Talent;Strategic Priority Research Program(B)of the Chinese Academy of Sciences,Grant/Award Number:XDB33030200;National Natural Science Foundation of China,Grant/Award Numbers:11974390,U22A20263,52250308,12347185;National Key Basic Research Program of China,Grant/Award Numbers:2020YFA0309100,2019YFA0308500;Postdoctoral Fellowship Program of CPSF,Grant/Award Number:GZC20230443。

摘　　要：Oxide semimetals exhibiting both nontrivial topological characteristics stand as exemplary parent compounds and multiple degrees of freedom,offering a promise for the realization of novel electronic states.In this work,we report the structural and transport phase transition in an oxide semimetal,SrNbO_(3),achieved through effective anion doping.Notably,the resistivity increased by more than three orders of magnitude at room temperature upon nitrogendoping.The extent of electronic modulation in SrNbO_(3)is strongly correlated with misfit strain,underscoring its phase instability to both chemical doping and crystallographic symmetry variations.Using first-principles calculations,we discern that elevating the level of nitrogen doping induces an upward shift in the conductive bands of SrNbO_(3−δ)N_(δ).Consequently,a transition from a metallic state to an insulating state becomes apparent as the nitrogen concentration reaches a threshold of 1/3.This investigation shows effective anion engineering in oxide semimetals,offering pathways for manipulating their physical properties.

关 键 词：anion doping metal-to-insulator transition oxide semimetal phase transition 

分 类 号：O46[理学—电子物理学]