Regulating the key performance parameters for Hg-based IR NLO chalcogenides via bandgap engineering strategy  

作　　者：A-Yang Wang Sheng-Hua Zhou Mao-Yin Ran Xin-Tao Wu Hua Lin Qi-Long Zhu 

机构地区：[1]State Key Laboratory of Structural Chemistry,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences(CAS),Fuzhou 350002,China [2]Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350108,China [3]College of Chemistry,Fuzhou University,Fuzhou 350108,China [4]University of Chinese Academy of Sciences,Bejing 100049,China

出　　处：《Chinese Chemical Letters》2024年第10期490-494,共5页中国化学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.22175175 and 22193043);Natural Science Foundation of Fujian Province(Nos.2022L3092 and 2023H0041);Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(No.2021ZR118);the Youth Innovation Promotion Association CAS(No.2022303)。

摘　　要：Recently,non-centrosymmetric(NCS)Hg-based chalcogenides have garnered significant interest due to their strong second-harmonic-generation intensities(deff),making them attractive candidates for infrared nonlinear optical(IR-NLO)application.However,achieving both wide band gaps(Eg)and large phasematched deffsimultaneously in these materials remains a challenge due to their inherent constraints on each other.In this research,we have successfully obtained two quaternary NCS Hg-based chalcogenides,Rb2HgGe_(3)S_(8)and Cs_(2)HgGe_(3)S_(8),by implementing a bandgap engineering strategy that involves alkali metal introduction and Hg/Ge ratio regulation.Both compounds consist of 2D[Hg Ge_(3)S_(8)]_(2)–anionic layers made of 1D[HgGeS_(6)]^(6–)chains and dimeric[Ge_(2)S_(6)]_(4–)polyhedra arranged alternately,and the charge-balanced Rb+/Cs+cations located between these layers.Remarkably,Rb_(2)HgGe_(3)S_(8)and Cs_(2)HgGe_(3)S_(8)exhibit overall properties required for promising IR-NLO materials,including sufficient PM deff(0.55–0.70×AgGaS_(2)@20_(5)0 nm),large Eg(3.27–3.41 e V),giant laser-induced damage thresholds(17.4–19.7×AgGaS_(2)@1064 nm),broad optical transmission intervals(0.32–17.5μm),and suitable theoretical birefringence(0.069–0.086@2050 nm).Furthermore,in-depth theoretical analysis reveals that the exceptional IRNLO performance is attributed to the synergy effects of distorted[HgS_(4)]and[GeS_(4)]tetrahedra.Our study provides a useful strategy for enhancing the Eg and advancing Hg-based IR-NLO materials,which is expected to extended and implemented in other chalcogenide systems.

关 键 词：Hg-based chalcogenides IR nonlinear material Structure-activity relationship Wide energy gap Bandgap engineering strategy 

分 类 号：TB34[一般工业技术—材料科学与工程]