基于FASnI_(3)的钙钛矿太阳电池仿真研究  

Simulation study of perovskite solar cells based on FASnI_(3)

作　　者：甘永进[1] 邱贵新 曾昭祥 李玉霞 覃斌毅 GAN Yongjin;QIU Guixin;ZENG Zhaoxiang;LI Yuxia;QIN Binyi(Guangxi Colleges and Universities Key Lab of Complex System Optimization and Big Data Processing,Yulin Normal University,Yulin Guangxi 537000,China;Guangxi Minzu Normal University,Chongzuo Guangxi 532200,China;School of Physics and Telecommunication Engineering,Yulin Normal University,Yulin Guangxi 537000,China;Center for Applied Mathematics of Guangxi,Yulin Normal University,Yulin Guangxi 537000,China)

机构地区：[1]玉林师范学院广西高校复杂系统优化与大数据处理重点实验室,广西玉林537000 [2]广西民族师范学院,广西崇左532200 [3]玉林师范学院物理与电信工程学院,广西玉林537000 [4]玉林师范学院广西应用数学中心,广西玉林537000

出　　处：《电源技术》2024年第10期2058-2065,共8页Chinese Journal of Power Sources

摘　　要：为提高电池的效率、减少环境污染,提出一种结构为FTO/Zn(O_(0.3),S_(0.7))/FASnI_(3)/NiO/Au的无铅钙钛矿太阳电池。该电池以FASnI_(3)为光活性层,Zn(O_(0.3),S_(0.7))和NiO分别为电子传输层和空穴传输层,FTO和Au为接触电极。在太阳电池电容模拟器(SCAPS)中构建模型并设置材料参数,通过控制变量法进行参数优化。结果表明,当FASnI_(3)厚度为500 nm时,器件对光子的吸收较充分,输出最高的功率转换效率(PCE);随着FASnI_(3)缺陷态密度的升高,器件内部载流子复合中心增多,提高了载流子复合率,控制FASnI_(3)缺陷态密度不超过10^(14) cm^(-3)可确保电池输出性能较佳;当Zn(O_(0.3),S_(0.7))的厚度和电子亲和势优化为30 nm和3.5 eV时,载流子运输更为有效,电池输出最高的PCE;增大Zn(O_(0.3),S_(0.7))与FASnI_(3)界面缺陷态密度,导致光生载流子在界面更容易被捕获,控制Zn(O_(0.3),S_(0.7))与FASnI_(3)界面缺陷态密度不超过10^(13) cm^(-3)有利于提高电池性能。A lead-free perovskite solar cell with a structure of FTO/Zn(O_(0.3),S_(0.7))/FASnI_(3)/NiO/Au was proposed to improve the cells efficiency and reduce environmental pollution.FASnI_(3)was used as the light active layer,Zn(O_(0.3),S_(0.7))and NiO were adopted as the electron transport layer and hole transport layer,respectively,and FTO and Au were used as the contact electrodes.The model was built,the material parameters were set in SCAPS,and the parameters were optimized through the control variable method.The simulation results show that when the thickness of FASnI_(3)is 500 nm,the device sufficiently absorpts the photons and obtains the highest PCE.Moreover,with the increase of the defect density of FASnI_(3),the carrier recombination centers in the device increase,and the carrier recombination rate promotes.When the defect density of FASnI_(3)does not exceed 10^(14) cm^(-3),the output performance is better.In addition,when the thickness and the electron affinity of Zn(O_(0.3),S_(0.7))are 30 nm and 3.5 eV,the carrier transport is more efficient and PCE is the highest.When increasing the defect density at the interface between Zn(O_(0.3),S_(0.7))and FASnI_(3),the photogenerated carriers are more easily captured at the interface.It’s conducive for the better performance of the cell to control the defect density at the interface between Zn(O_(0.3),S_(0.7))and FASnI_(3)within 10^(13) cm^(-3).

关 键 词：钙钛矿太阳电池 FASnI_(3) SCAPS仿真 活性层厚度 光电转换输出 

分 类 号：TM914.4[电气工程—电力电子与电力传动]