高功率Ku波段微带环行/隔离组件设计与验证  

Design and demonstration of a high power Ku-band microstrip circulator/isolator assembly

作　　者：陈宁[1] 孙静 王倩 李扬兴[1] CHEN Ning;SUN Jing;WAN Qian;LI Yang-xing(Ninth Institute,China Electronics Technology Group Corporation,Mianyang 621000,China)

机构地区：[1]中国电子科技集团公司第九研究所,四川绵阳621000

出　　处：《磁性材料及器件》2024年第5期65-70,共6页Journal of Magnetic Materials and Devices

摘　　要：针对提升微带器件功率密度的需求,根据微带环行器的设计理论,设计三种不同电路结构的Ku波段微带环行/隔离组件。对三种电路结构加载50 W功率时的电场和磁场强度进行了分析,并制作异形电容匹配双Y结电路和多路加抗的平面Y谐振器电路两种结构的微带环行/隔离组件。测试结果表明,采用多路加抗的平面Y谐振器电路结构设计的Ku波段微带环行/隔离组件,在16.5~17.5 GHz的工作频带内,插入损耗小于0.48 dB,电压驻波比小于1.25,单结隔离度大于20 dB,外形尺寸为6 mm×6 mm×1.8 mm,额定功率为50 W,满足设计要求。In order to improve the power density of microstrip devices,three Ku-band microstrip circulator/isolator assembly with different circuit structures are designed according to the design theory of microstrip circulator.The electric field intensity and magnetic field intensity of three kinds of circuit structures were analyzed when the power of 50 W was loaded,and microstrip circulator/isolator assembly of two kinds of circuit structures,a profiled capacitor match double Y junction circuit structures and a planar Y resonator structure with multiple reactance,are made.The test result shows that in the working band of 16.5 to 17.5 GHz,the Ku-band microstrip circulator/isolator assembly with the planar Y resonator circuit structures has the insertion loss less than 0.48 dB,the VSWR less than 1.25,the single circulator junction isolation greater than 20 dB,the overall size is 6 mm×6 mm×1.8 mm,and the rated power is 50 W,meeting the design requirements.

关 键 词：环行/隔离组件 KU波段 Y结 电路 

分 类 号：TN621[电子电信—电路与系统]