Effect of Free Radicals on Irradiation Chemistry of a Double-Coordination Organotin(Sn_(4))Photoresist by Adjusting Alkyl Ligands  

作　　者：Hao Chen Yifeng Peng Haichao Fu Fuping Han Guangyue Shi Feng Luo Jun Zhao Danhong Zhou Pengzhong Chen Xiaojun Peng 

机构地区：[1]State Key Laboratory of Fine Chemicals,Frontiers Science Center for Smart Materials,School of Chemical Engineering,Dalian University of Technology,Dalian 116024 [2]Research and Development Center of Valiant Co.,Ltd.,YEDA,Yantai 264006 [3]School of Materials Science and Engineering,Nankai University,Tianjin 300350 [4]Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201203 [5]State Key Laboratory of Fine Chemicals,College of Materials Science and Engineering,Shenzhen University,Shenzhen 518060

出　　处：《CCS Chemistry》2024年第8期2044-2053,共10页中国化学会会刊（英文）

基　　金：supported by the National Natural Science Foundation of China(grant nos.22090011 and 22378052);the Fundamental Research Funds for China Central Universities(grant nos.DUT22LAB608 and DUT20RC(3)030);Key R&D Program of Shandong Province(grant no.2021CXGC010308).

摘　　要：Metal oxide cluster(MOC)photoresists are highly promising materials for the next generation of extreme ultraviolet lithography(EUVL).The consecutive exploration of novel MOC materials and their structural irradiation chemistry are the major concerns associated with EUVL.Herein,we report two bicoordinated tin-oxo clusters(TOCs),the organic ligands of which contain both adamantane carboxylic acids and alkyl groups(methyl:Sn_(4)–Me–C10;butyl:Sn_(4)–Bu–C10).We explore the correlation between the structures of the TOCs and their patterning properties by adjusting the alkyl groups coordinated to the Sn atom.The structural variation causes different irradiation chemistry,with Sn_(4)–Me–C10 exhibiting improved resolution and Sn_(4)–Bu–C10 demonstrating higher sensitivity.These differences are attributed to the bonding energies of the Sn-methyl and Sn-butyl groups,the size of the resulting alkyl radicals,and their reaction probabilities.Both clusters occur in the reactions of Sn–C bond cleavage and the decarboxylation of adamantane carboxylic acids upon irradiation.However,the entire process exhibits distinct characteristics.Based on the electron-beam lithography and other experiments,we proposed irradiationinduced reaction mechanisms for both clusters.The Sn_(4)–Bu–C10 cluster predominantly undergoes alkane chain linkage,whereas the Sn_(4)–Me–C10 cluster mainly follows the adamantanes linkage pathway.

关 键 词：extreme ultraviolet photoresist tin-oxo clusters free radical alkyl ligand lithographic process semiconductor manufacturing 

分 类 号：O62[理学—有机化学]