Effects of interfacial buffering layer on imprint and domain switching dynamics in Pb(Zr,Ti)O_(3)thin-film heterostructures  

作　　者：Lingzhi Lu Chunyan Zheng Weijie Zheng Chenyu Dong Yuhao Yue Yawen Xu Zheng Wen 

机构地区：[1]College of Physics Qingdao University Qingdao,Shandong 266071,P.R.China [2]College of Electronics and Information Qingdao University,Qingdao Shandong 266071,P.R.China

出　　处：《Journal of Advanced Dielectrics》2024年第3期51-57,共7页先进电介质学报（英文）

基　　金：sponsored by the National Natural Science Foundation of China(52372113);Natural Science Foundation of Shandong Province(ZR2020JQ03);Taishan Scholar Program of Shandong Province(tsqn201812045).

摘　　要：Interfacial engineering is important for ferroelectric thin-film heterostructures because of the modulation of boundary conditions of the spontaneous polarizations and their switching behaviors,which are essential for ferroelectric electronics.In this work,we study the effects of interfacial buffering layer,5-nm-thick SrTiO_(3)(STO),on the imprint and domain switching of epitaxial Pt/Pb(Zr,Ti)O_(3)/SrRuO_(3)(SRO)thin-film heterostructures and capacitors.By buffering the ultrathin SrTiO_(3) layer at the Pb(Zr,Ti)O_(3)surface,the imprint effect can be dramatically alleviated as observed in the piezoresponse force microscopy(PFM)-measured domain structures and polarization–electric field hysteresis loops in thin-film capacitors.However,when the SrTiO_(3)layer is buffered at the Pb(Zr,Ti)O_(3)/SrRuO_(3)interface,the imprint effect is slightly increased.These phenomena are explained based on the band alignments among the Pt and SrRuO_(3)electrodes and the Pb(Zr,Ti)O_(3)layer associated with the existence of oxygen vacancies in the SrTiO_(3) layer.With the reduction of imprint effect,the domain switching dynamics are also improved in the SrTiO_(3)-buffered Pb(Zr,Ti)O_(3)capacitor,in which the switching activation field is decreased by about 45.3%in comparison with that of the pristine capacitor.These results facilitate the design and optimization of ferroelectric devices with the improvements in domain configurations,switching behaviors and band alignments.

关 键 词：Interfacial engineering HETEROSTRUCTURES BUFFERING SWITCHING POLARIZATIONS 

分 类 号：TM22[一般工业技术—材料科学与工程]