Domain patterning in nonpolar cut PMN–PT by focused ion beam  

作　　者：Elena Pashnina Dmitry Chezganov Alla Slautina Anton Turygin Andrei Ushakov Qingyuan Hu Xin Liu Zhuo Xu Xiaoyong Wei Vladimir Shur 

机构地区：[1]School of Natural Sciences and Mathematics Ural Federal University Yekaterinburg 620002,Russia [2]Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education&International Center for Dielectric Research School of Electronic Science and Engineering Xi’an Jiaotong University Xi’an 710049,P.R.China

出　　处：《Journal of Advanced Dielectrics》2024年第2期83-89,共7页先进电介质学报（英文）

基　　金：the Ministry of Science and Higher Education of the Russian Federation(Project No.075-15-2021-1387);by the National Key R&D Program of China(Grant No.2021YFE0115000);the Ural Center for Shared Use“Modern nanotechnology”Ural Federal University(Reg.No.2968);supported by the Ministry of Science and Higher Education RF(Project No.075-15-2021-677)was used.

摘　　要：The formation of the ferroelectric domain structure as a result of irradiation by focused ion beam of[100]-cut 0.61Pb(Mg_(1/3)Nb_(2/3)TO_(3)–0.39PbTiO_(3)(PMN–PT)single crystals covered by surface artificial dielectric layer and with free surface was investigated.The dot irradiation resulted in formation of the wedge-like domains grown along[001]direction.For irradiation of the free surface,the domains are mainly located under the surface,while at the irradiated surface with an artificial dielectric layer the domains are located at the surface.It was shown that the subsurface wedge-shaped part of the domain is unstable and completely disappears after a month due to spontaneous backswitching under the action of the residual depolarization field.The revealed nonlinear dose dependence of the domain sizes was attributed to the distribution of the electric field using the point charge model.The domain interaction for the distance between irradiated dots below 30m has been revealed in all samples.It was shown that the decrease of the distance between irradiated dots in the created domain row leads to an increase in the length of the central domains,which is explained by the contribution of all injected charges to the switching field.

关 键 词：Ion beam domain patterning dielectric layer domain interaction spontaneous backswitching domain engineering relaxor ferroelectric 

分 类 号：TM20[一般工业技术—材料科学与工程]