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作 者:Guigang Zhou Jinsheng Ji Ziling Chen Jing Shuai Qijie Liang Qian Zhang
机构地区:[1]School of Materials,Shenzhen Campus of Sun Yat-sen University,No.66,Gongchang Road,Guangming District,Shenzhen 518107,People’s Republic of China [2]Songshan Lake Materials Laboratory,Songshan Lake Mat Lab,Dongguan 523808,People’s Republic of China
出 处:《Materials Futures》2024年第4期142-170,共29页材料展望(英文)
基 金:financially supported by the National Natural Science Foundation of China(Grant No.52202183);the Shenzhen Science and Technology Program(Grant No.202206193000001);Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2023B1515120041,2023A1515012072);the Open Project Fund from Guangdong Provincial Key Laboratory of Materials and Technology for Energy Conversion(Grant No.MATEC2023KF003).
摘 要:Materials are the building blocks of various functional applications.With Moore’s Law approaching Si’s physical limits,traditional semiconductor-based monolithic three-dimensional(M3D)integrated circuits always suffer from the issues,including electrical performance(carrier scattering),chip-overheating(low heat conductivity),electromagnetic interference.Recently,two-dimensional transition metal dichalcogenides(2D TMDs)inherit the atomically-thin thickness of 2D materials and exhibit outstanding natures,such as smooth flatness(excellent compatibility),electronic property(thickness below 1 nm),absence of dangling bonds(decreasing carrier scattering),making them highly promising for next-generation functional devices in comparison with traditional bulk materials.Up to now,2D TMD-based transistors have already exhibited the feasibility of replacing conventional one in terms of performances.Furthermore,the technology of large-area 2D TMDs films has been greatly successful,which lays the foundation for the fabrication of scalable 2D TMD-based devices.Besides,the scalable devices based on 2D TMDs also show the prospects of realizing ultra-high-density M3D integrated circuits owing to the presence of outstanding compatibility.Herein,we focus some thriving research areas and provide a systematic review of recent advances in the field of scalable electronic and optoelectronic devices based on 2D TMDs,including large-area synthesis,property modulation,large-scale device applications,and multifunctional device integration.The research in 2D TMDs has clearly exhibited the tremendous promise for scalable diversified applications.In addition,scalable 2D TMD-based devices in terms of mass production,controllability,reproducibility,and low-cost have also been highlighted,showing the importance and benefits in modern industry.Finally,we summarize the remaining challenges and discuss the future directions of scalable 2D TMDs devices.
关 键 词:two-dimensional materials wafer-Scale scalable electronics
分 类 号:TN2[电子电信—物理电子学] TB34[一般工业技术—材料科学与工程]
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