Large piezoelectric property of Bi(Fe_(0.93)Mn_(0.05)Ti_(0.02))O_(3) film by constructing internal bias electric field  

作　　者：Xiufang Yuan Mengjia Fan Wenxuan Wang Guoguo Wang Xiujuan Lin Shifeng Huang Changhong Yang 

机构地区：[1]Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials University of Jinan,Jinan 250022,P.R.China

出　　处：《Journal of Advanced Dielectrics》2024年第4期63-70,共8页先进电介质学报（英文）

基　　金：supported by the Shandong provincial key research and development plan(Grant No.2022CXPT045);Taishan Scholars Program(Grant No.tstp20221130).

摘　　要：BiFeO_(3)(BFO),Mn-doped-BFO(BFMO),Ti-doped-BFO(BFTO),and(Mn,Ti)-codoped-BFO(BFMTO)thin films are fabricated on the Pt/TiO_(2)/SiO_(2)/Si substrates via a sol–gel method combined with spin-coating and the subsequent layer-by-layer annealing technique.Compared with BFO film,the BFMTO film exhibits the lowest leakage current density(-10^(-4) A/cm^(2)@290 kV/cm).Notably,the polarization–electric field(P–E)loop of BFMTO film exhibits a positive displacement along the x-axis due to the existence of internal bias electric field,which is in agreement with the results of the PFM phase and amplitude curves.Especially,a very prominent inverse piezoelectric constant of d_(33)-160 pm/V was obtained,which overcomes other related thin films.The internal bias electric field of BFMTO film can be caused by the different work functions of the thin film and the bottom electrode,accumulation of oxygen vacancies and the formation of defect dipoles.Besides,the internal bias electric field of BFMTO film has a good stability at the same electric field after experiencing the test cycle from low electric field to high electric field(400–1900 kV/cm).These results indicate that self-polarized BFMTO film can be integrated to devices without additional polarization process,and have a wide range of application in microelectromechanical systems.

关 键 词：SELF-POLARIZATION bismuth ferrite film ion doping 

分 类 号：TM22[一般工业技术—材料科学与工程]