基于介电调制的埋双源沟槽栅TFET的生物传感器  

Dielectric modulated buried dual source trench gate TFET based biosensors

作　　者：崔国伟 许会芳 高伟凡 CUI Guowei;XU Huifang;GAO Weifan(School of Electrical and Electronic Engineering,Anhui Science and Technology University,Bengbu 233000,China)

机构地区：[1]安徽科技学院电气与电子工程学院,安徽蚌埠233000

出　　处：《安徽科技学院学报》2024年第6期40-46,共7页Journal of Anhui Science and Technology University

基　　金：安徽省高校自然科学研究项目(2023AH051845);安徽科技学院横向项目(880937);安徽科技学院重点学科建设项目(XK-XJGY002)。

摘　　要：目的:为检测生物分子,提出一种基于介电调制的埋双源沟槽栅隧穿场效应晶体管(DM-BDSTG TFET)的生物传感器。方法:采用更容易放置生物分子的沟槽栅结构,并利用Silvaco Atlas软件对基于DM-BDSTG TFET的生物传感器性能进行评估。结果:当栅源电压为1.1 V时,漏极电流灵敏度可以达到1.13×10^(12)。此外,亚阈值摆幅可以达到34 mV/decade。结论:基于DM-BDSTG TFET的生物传感器能够更好地提高对生物分子的检测和识别能力。Objective:A dielectric modulated buried dual source trench gate TFET(DM-BDSTG TFET)based biosensors was proposed for detection of biomolecules.Methods:The trench gate was employed because it was easier to accommodate biomolecules in the proposed device.The performances of DM-BDSTG TFET based biosensors were evaluated by using Silvaco Atlas simulator.Results:The results indicated that the drain current sensitivity could reach 1.13×10^(12 )when the gate-source voltage was 1.1 V.Moreover,the subthreshold slope could reach 34 mV/decade.Conclusion:The DM-BDSTG TFET based biosensors could better improve the detection and recognition of biomolecules.

关 键 词：埋双源 沟槽栅 生物传感器 灵敏度 亚阈值摆幅 

分 类 号：TN386[电子电信—物理电子学]