Engineering strontium aluminate sacrificial layers for fabricating monocrystalline complex oxide freestanding membranes  

作　　者：Di Lu 

机构地区：[1]School of Microelectronics,University of Science and Technology of China,Hefei 230026,China

出　　处：《The Innovation》2024年第4期23-24,共2页创新（英文）

基　　金：supported by the National Natural Science Foundation of China(NSFC)under grant no.62274150;University of Science and Technology of China.

摘　　要：There was a long history of releasing various monocrystalline semiconductor structures from their hosting substrates to form“freestanding”structures,in order to change the substrates and for other special purposes.The release was achieved by breaking the bonds between the film and the substrate,through methods such as forming interfacial gas bubbles(“smart-cut”technology for fabricating semiconductor-on-insulator wafers)or chemical etching(selectively etching epitaxial AlAs underlayer for fabricating GaAs-on-silicon photonic devices).The exfoliation of layered van der Waals materials in recent decades also produced another class of freestanding monocrystalline materials—twodimensional(2D)materials.In addition to changeable substrates,being freestanding also allowed unique methods to manipulate the 2D materials;for example,transferring them on flexible substrates and directly stretching them controls the strain in their lattice,as well as their strain-dependent physical properties.

关 键 词：free STRETCHING fabricating 

分 类 号：TB33[一般工业技术—材料科学与工程]