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作 者:胡易林 杨海燕[1] 侯晓敏[1] 李乾 牛佳佳 郝斐 折伟林[1] 王利军 HU Yi-lin;YANG Hai-yan;HOU Xiao-min;LI Qian;NIU Jia-jia;HAO Fei;SHE Wei-lin;WANG Li-jun(North China Research Institute of Electro-Optics,Beijing 100015,China)
出 处:《红外》2024年第10期30-37,共8页Infrared
摘 要:随着红外探测器技术的发展,对高质量碲镉汞外延材料质量的要求逐渐提高,这也对碲锌镉衬底质量提出了更高的要求。对液相外延碲镉汞薄膜表面上一种尺寸较大且周围伴有平台的点状缺陷进行了形貌及成分表征。该类型缺陷的形貌类似于中间凹陷的陨石坑(简称“陨石坑”状),其组分与碲镉汞外延膜正常区域相比未出现明显偏离。研究发现,液相外延过程中在碲镉汞生长溶液与碲锌镉衬底接触前,衬底表面出现近似三角形、圆形的缺陷,且该缺陷下方存在孔洞类形貌,在该缺陷之上外延的碲镉汞薄膜表面会出现“陨石坑”状缺陷。该缺陷的来源定位为后续控制此类缺陷的产生提供了支撑。With the development of infrared detector technology,the demand for high-quality mercury cadmium telluride epitaxial materials is gradually increasing,which also puts forward higher requirements for the quality of cadmium zinc telluride substrates.The morphology and composition of a large-sized point like defect with a platform around it on the surface of a liquidphase epitaxial cadmium telluride mercury film are characterized.The morphology of this type of defect is similar to a crater with a central depression(referred to as a"crater"shape),and its composition does not show significant deviation from the normal area of the tellurium cadmium mercury epitaxial film.Research has found that during the liquidphase epitaxy process,approximately triangular or circular defects appear on the substrate surface before the growth solution of mercury cadmium telluride comes into contact with the cadmium zinc telluride substrate,and there are pore like morphologies below the defects.A"crater"shaped defect appears on the surface of the epitaxially grown mercury cadmium telluride film above the defect.The source of this defect is located to provide support for controlling the occurrence of such defects in the future.
分 类 号:TN305[电子电信—物理电子学]
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