检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:龚正 张树钱 郭焱民 苏昊 李俊龙 王堃 吴朝兴[1,2] 张永爱 周雄图[1,2] 郭太良 GONG Zheng;ZHANG Shuqian;GUO Yanmin;SU Hao;LI Junlong;WANG Kun;WU Chaoxing;ZHANG Yongai;ZHOU Xiongtu;GUO Tailiang(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China;Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350108,China)
机构地区:[1]福州大学物理与信息工程学院,福州350108 [2]中国福建光电信息科学与技术创新实验室,福州350108
出 处:《真空科学与技术学报》2024年第10期825-840,共16页Chinese Journal of Vacuum Science and Technology
基 金:国家重点研发计划项目(2021YFB3600400)。
摘 要:高效、准确、全面地衡量光电薄膜,可以深入了解其结构特性、电学与光学特性等方面的信息,在器件的设计和性能优化方面发挥着关键作用。同时,光电薄膜的检测与表征也为光电薄膜材料的研究和开发提供了重要的理论基础和指导,推动了光电器件领域的技术进步和应用拓展,具有重要的学术意义和应用价值。近些年,涌现出多种新型检测与表征技术,然而相关综述文献较少,难以直观地了解各种最新表征方法的原理及其在器件性能优化中的具体应用。文章围绕角度分辨、空间分辨、时间分辨三个表征维度,综述了目前光电薄膜检测与表征技术的基本原理和特点,并介绍了相关技术在光电薄膜的发光特性、可视化空间异质性、载流子动力学等方面的应用进展。最后,讨论并展望了光电薄膜检测与表征技术的未来发展趋势。Efficient,accurate and comprehensive measurement of photoelectric thin films can provide indepth information about their structural properties,electrical and optical characteristics,etc.,which plays a key role in the design and performance optimization of devices.Additionally,the detection and characterization of photoelectric thin film also provide an important theoretical basis and guidance for the research and development of photoelectric thin film materials and promote the technical progress and application expansion in the field of photoelectric devices,which is of great academic significance and application value.In recent years,a variety of new detection and characterization techniques have emerged,but there are a few related reviews of the literature,which makes it difficult to intuitively understand the principles of the latest characterization methods and their specific applications in the optimization of device performance.In this paper,the basic principles and characteristics of current detection and characterization techniques of photoelectric thin films are reviewed based on the three dimensions of angle-resolved,spatially-resolved and time-resolved,and the application progress of relevant techniques in the luminescence characteristics,visualization of spatial heterogeneity and carrier dynamics of photoelectric thin films is introduced.Finally,the future development trends of photoelectric thin film detection and characterization technologies are discussed and anticipated.
分 类 号:TN247[电子电信—物理电子学] TN29
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.90