金刚石单晶中的位错及其对器件影响的研究进展  

Research Progress of Dislocations in Diamond Single Crystals and Their Effects on Devices

作　　者：韩赛斌 胡秀飞 王英楠 王子昂 张晓宇[1,2] 彭燕 葛磊[1,2] 徐明升[1,2] 徐现刚 冯志红[3,4] HAN Saibin;HU Xiufei;WANG Yingnan;WANG Ziang;ZHANG Xiaoyu;PENG Yan;GE Lei;XU Mingsheng;XU Xiangang;FENG Zhihong(Institute of Novel Semiconductors,Shandong University,Jinan 250100,China;State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China;National Key Laboratory of Application Specific Integrated Circuit,Shijiazhuang 050051,China;The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China)

机构地区：[1]山东大学新一代半导体材料研究院,济南250100 [2]山东大学晶体材料国家重点实验室,济南250100 [3]专用集成电路国家级重点实验室,石家庄050051 [4]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《材料导报》2024年第20期33-46,共14页Materials Reports

基　　金：山东省重点研发计划(2022CXGC010103,2022ZLGX02);国家自然科学基金(62004118);脉冲功率激光技术国家重点实验室开放基金项目(SKL2021KF08);晶体材料国家重点实验室自主课题;国防科技重点实验室基金项目。

摘　　要：金刚石是超宽禁带半导体材料的代表之一,具有禁带宽度大、热导率高、载流子迁移率高、电子饱和漂移速度快、抗辐射性能好等优异性质,在功率器件、量子信息、辐射探测等高科技领域的应用越来越广泛。然而,与其他成熟的半导体材料如Si的零位错、SiC的螺位错(TSD)低于10^(2)cm^(-2)相比,金刚石单晶的位错密度处于10^(3)~10^(8)cm^(-2),这是其器件性能未能充分发挥的原因之一。研究位错机理和降低位错也是现阶段金刚石研究的热点之一。本文汇总分析了金刚石单晶中位错的主要类型和位错产生原因,重点讨论了金刚石位错的表征技术、位错密度降低方法以及位错的存在对不同器件性能的影响,最后总结了金刚石当前所面临的机遇和挑战,并展望了金刚石未来发展方向。Diamond is one of well-known ultra-wide band gap semiconductor materials.It has excellent properties such as wide band gap,high thermal conductivity,high carrier mobility,high electron saturation drift velocity,and good radiation resistance.The progresses of diamond technology in recent decades has opened doors for the application for high-tech fields such as power devices,quantum information,and radiation detection.However,compared with other mature semiconductor materials such as Si with zero dislocation and SiC which TSD dislocation less than 10^(2)cm^(-2),the dislocation density of diamond single crystal is in the range of 10^(3)—10^(8)cm^(-2),that lead to its performance far lower than the theoretical value.Nowadays the dislocation mechanism and reducing dislocation is of acute interest.In this paper,the main types of dislocations in diamond single crystals and the induced causes of dislocations are introduced.The characterization methods of diamond dislocations,the approaches of reducing dislocation density and the influence of dislocations on the performance of different devices are discussed.Finally,the opportunities and challenges faced by diamond are summarized,and the future development of diamond is prospected.

关 键 词：金刚石 位错 位错检测技术 位错密度降低方法 缺陷 

分 类 号：O772[理学—晶体学]