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作 者:Zhe Zhou Yueyue Wu Keyuan Pan Duoyi Zhu Zifan Li Shiqi Yan Qian Xin Qiye Wang Xinkai Qian Fei Xiu Wei Huang Juqing Liu
机构地区:[1]Key Laboratory of Flexible Electronics(KLOFE)&Institute of Advanced Materials(IAM),Nanjing Tech University(NanjingTech),30 South Puzhu Road,Nanjing 211816,China [2]Shandong Technology Center of Nanodevices and Integration,School of Microelectronics,Shandong University,Jinan 250100,China [3]Shaanxi Institute of Flexible Electronics(SIFE),Northwestern Polytechnical University(NPU),127 West Youyi Road,Xi’an 710072,China
出 处:《Light(Science & Applications)》2024年第9期1801-1808,共8页光(科学与应用)(英文版)
基 金:the financial support from the National Natural Science Foundation of China(62274088,62288102);the Project funded by China Postdoctoral Science Foundation(2023M741657);the Jiangsu Funding Program for Excellent Postdoctoral Talent(2023ZB554);the Jiangsu Specially-Appointed。
摘 要:Crossbar resistive memory architectures enable high-capacity storage and neuromorphic computing,accurate retrieval of the stored information is a prerequisite during read operation.However,conventional electrical readout normally suffer from complicated process,inaccurate and destructive reading due to crosstalk effect from sneak path current.Here we report a memristive-photoconductive transduction(MPT)methodology for precise and nondestructive readout in a memristive crossbar array.The individual devices present dynamic filament form/fuse for resistance modulation under electric stimulation,which leads to photogenerated carrier transport for tunable photoconductive response under subsequently light pulse stimuli.This coherent signal transduction can be used to directly detect the memorized on/off states stored in each cell,and a prototype 4*4 crossbar memories has been constructed and validated for the fidelity of crosstalk-free readout in recall process.
关 键 词:CROSSTALK PRECISE enable
分 类 号:TP333[自动化与计算机技术—计算机系统结构]
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