超大晶格二维纳米片调控聚酰亚胺基复合介质击穿和极化行为研究  

Breakdown and polarization behavior of polyimide based composite dielectric regulated by super-large lattice two-dimensional nanosheet

作　　者：邹建鑫 赵贺 李鑫广 丛明锐 孙佳慧[1] 黄子瀚 富钰茜 ZOU Jianxin;ZHAO He;LI Xinguang;CONG Mingrui;SUN Jiahui;HUANG Zihan;FU Yuxi(College of Electrical and Electronic Engineering,Harbin University of Science and Technology,Harbin 150080,China)

机构地区：[1]哈尔滨理工大学电气与电子工程学院,黑龙江哈尔滨150080

出　　处：《绝缘材料》2024年第10期60-67,共8页Insulating Materials

基　　金：国家自然科学基金面上项目(51777047);黑龙江省普通高校基本科研业务费专项资金资助项目(2021-KYYWF-0748);哈尔滨理工大学创新创业训练计划资助项目(S202310214155)。

摘　　要：为了改善二维纳米片在聚合物基体中的弱分散问题,提高复合材料的电学性能,采用水热法制备二维纳米扩层二硫化钼(E-MoS_(2))纳米片,通过原位聚合法制备聚酰亚胺(PI)基超大晶格二硫化钼纳米片(PI/E-MoS_(2))复合薄膜。利用扫描电子显微镜(SEM)对复合薄膜的表面和断面结构进行了表征,并用傅里叶红外光谱仪(FTIR)对复合薄膜的分子价键进行成分分析,用X射线衍射仪(XRD)研究复合薄膜的相结构。此外,测量了复合薄膜的介电常数、交流电导率和介质损耗因数,探讨了纳米片扩层晶格结构对薄膜击穿和极化行为的影响机理。结果表明:在PI薄膜中掺入少量的E-MoS_(2)纳米片,PI/E-MoS_(2)复合薄膜表面无明显团聚现象,其断面形貌无明显孔洞且结构缺陷数量较少,表明基体与填料相容性好。引入E-MoS_(2)纳米片可以增强复合薄膜内部的界面极化,显著提高薄膜的介电常数及电气强度,并降低其介质损耗。In order to improve the weak dispersion of two-dimensional nanosheets in polymer matrix and improve the electrical performance of composite materials,a two-dimensional micron expanded layer molybdenum disulfide(E-MoS_(2))was prepared by hydrothermal method,and then polyimide(PI)based super-large lattice molybdenum disulfide nanosheets(PI/E-MoS_(2))composite films were prepared by in-situ polymerization method.The surface/cross section structure of the composite films was observed by scanning electron microscopy(SEM),the molecular valence bond composition of the composite film was analyzed by Fourier infrared spectroscopy(FTIR),and the phase structure of the composite film was analyzed by X-ray diffraction(XRD).Furthermore,the dielectric constant,DC electrical conductivity,and dielectric loss factor of the composite films were tested,and the effect mechanism of extended lattice on the breakdown and polarization behavior of composite films was studied.The results show that when a small amount of E-MoS_(2)nanosheets is added into PI film,there is little agglomeration phenomenon on the surface of PI/E-MoS_(2)films,and there is little obvious holes and a small number of structural defects on the cross section,which indicates a good compatibility between fillers and matrix.The incorporation of E-MoS_(2)nanosheets can enhance the interfacial polarization of the composite films,improve both the dielectric constant and electric field strength,and decrease the dielectric loss.

关 键 词：绝缘材料 聚酰亚胺 介电性能 复合薄膜 

分 类 号：TM215[一般工业技术—材料科学与工程] TQ323.7[电气工程—电工理论与新技术]