SiC MOSFET高频逆变电路的振荡分析与抑制  

Oscillation Analysis and Suppression of SiC MOSFET High Frequency Inverter Circuit

作　　者：胡善超 王旭红 于秀健 郝思睿 HU Shan-chao;WANG Xu-hong;YU Xiu-jian;HAO Si-rui(Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学,信息学部,北京100124

出　　处：《电力电子技术》2024年第10期31-34,38,共5页Power Electronics

基　　金：国家重点研发计划(2022YFF0706202-1)。

摘　　要：电磁法探测技术通过向地面发送可控的方波信号并接收地下矿层反射回的信号以获取地质信息,电磁发射机的输出频率、电压和电流均可调节。随着对大功率和高频开关的需求不断增长,SiC金属氧化物半导体场效应晶体管(MOSFET)已成为新一代半导体技术的标志。然而,较高的开关频率引发了开关振荡问题。这里分析了SiC MOSFET的开关过程,通过仿真研究确定了杂散电感和驱动电阻对开关动态过程的显著影响,并设计了一种C型缓冲电路设计来有效抑制过电压开关振荡现象。实验结果显示,在开通和关断电阻设定为1Ω时,该C型缓冲电路显著降低了开关过程中的电压尖峰和振荡问题,验证了其在实际应用中的效果与可行性。Electromagnetic detection technology obtains geological information by sending controllable square wave signals to the ground and receiving signals reflected back from underground ore layers.The output frequency,voltage,and current of the electromagnetic transmitter can be adjusted.With the increasing demand for high-power and highfrequency switches,SiC metal oxide semiconductor field-effect transistor(MOSFET)have become the hallmark of the new generation of semiconductor technology.However,higher switching frequencies have caused a series of serious switching oscillation problems.An in-depth analysis of the switching process of SiC MOSFET is provided.Through simulation research,the significant effects of stray inductance and driving resistance on the switching dynamic process are determined,and a C-type buffer circuit design is proposed to effectively suppress overvoltage switching oscillations.The experimental results show that when the on and off resistance is set to 1,the C-type buffer circuit significantly reduces voltage spikes and oscillations during the switching process,verifying its effectiveness and feasibility in practical applications.

关 键 词：电磁发射机 开关振荡 缓冲电路 

分 类 号：TN32[电子电信—物理电子学]