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作 者:胡鑫 章文峰 HU Xin;ZHANG Wenfeng
机构地区:[1]西南石油大学,四川成都610500
出 处:《化工设计通讯》2024年第10期8-10,共3页Chemical Engineering Design Communications
摘 要:钙钛矿薄膜表面缺陷密度一般比体缺陷高两个数量级,其非辐射复合造成的开路电压(VOC)损失对器件性能影响极大。因此,引入1-萘甲基溴化铵(NMABr)在钙钛矿表面降低缺陷密度的同时形成界面偶极子和2D/3D钙钛矿异质结,促进载流子传输。这种基于偶极子层的缺陷钝化策略为表面钝化剂的选择提供了新的思路。The surface defect density of perovskite films is generally two orders of magnitude higher than that of bulk defects.the non-radiative recombination occurring at these surface defects significantly impacts the open-circuit voltage(VOC) loss and device performance.therefore,this study introduces 1-naphthylmethylammonium bromide(NMABr) to reduce the defect density on the surface of perovskite films while forming interface dipoles and 2D/3D perovskite heterojunctions,thereby promoting charge carrier transport.this defect passivation strategy based on the dipole layer provides a new approach for the selection of surface passivating agents.
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