一种实现能量重复利用的SiC MOSFET谐振驱动电路  

A SiC MOSFET Resonant Drive Circuit for Realizing Energy Recycling

作　　者：周琦 张宸宇 刘瑞煌 喻建瑜 Zhou Qi;Zhang Chenyu;Liu Ruihuang;Yu Jianyu(Electric Power Research Institute,State Grid Jiangsu Electric Power Co.,Ltd.,Nanjing 211103,China)

机构地区：[1]国网江苏省电力有限公司电力科学研究院,南京211103

出　　处：《半导体技术》2024年第11期981-987,共7页Semiconductor Technology

基　　金：国网江苏省电力有限公司科技项目(J2023129)。

摘　　要：针对传统SiC MOSFET驱动电路的驱动电阻导致损耗较高的问题,提出了一种SiC MOSFET谐振驱动电路。详细分析了提出的谐振驱动电路的工作原理,通过控制驱动电路中各开关管的通断,使电感与SiC MOSFET的输入电容产生谐振,从而重复利用输入电容中的能量,减小了驱动损耗。相较于传统驱动电路,该谐振驱动电路的驱动损耗主要包括新增开关管及其续流二极管导通时的导通损耗和SiC MOSFET内阻所产生的损耗,而非驱动电阻导致的损耗。搭建仿真模型和实验平台,对提出的谐振驱动电路在高频和不同占空比下的驱动性能进行验证,结果表明提出的谐振驱动电路具有良好的驱动性能,能够在高频工作条件下保证SiC MOSFET的通断。To address the issue of high loss caused by the drive resistance in traditional SiC MOSFET drive circuit,a SiC MOSFET resonant drive circuit was proposed.The working principle of the proposed resonant drive circuit was analyzed in detail.By controlling the on and off states of each switch tube in the drive circuit,resonance was generated between the inductor and the input capacitor of the SiC MOSFET,allowing for the recycling of energy stored in the input capacitor and reducing drive loss.Compared with the traditional drive circuit,the drive loss of this resonant drive circuit primarily consists of the conduction loss when the newly added switch tube and its freewheeling diode are on,as well as the loss due to the internal-resistance of the SiC MOSFET,rather than the loss caused by the drive resistance.A simulation model and experimental platform were established to verify the driving performance of the proposed resonant drive circuit under high frequency and different duty cycles.The results indicate that the proposed resonant drive circuit exhibits good driving performance and can ensure the on-off operation of the SiC MOSFET under high-frequency working conditions.

关 键 词：SiC MOSFET 驱动电路 谐振 开关损耗 寄生电容 

分 类 号：TN78[电子电信—电路与系统]