一种用于宽电源电压域的高速低功耗动态比较器  

A High-Speed and Low-Power Dynamic Comparator for Wide Supply Voltage Range

作　　者：李新[1] 董志鹏 Li Xin;Dong Zhipeng(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870

出　　处：《半导体技术》2024年第11期998-1007,共10页Semiconductor Technology

摘　　要：针对工业生产和车机系统中电压摆幅过大影响传统动态比较器精度和稳定性的问题,基于SMIC 90 nm CMOS工艺,设计了一种面向浮栅型的一次性可编程非易失性存储器的动态电流比较器。并设计了一种随电源电压变化的偏置电路,为比较器提供基准电压和电流。在动态电流比较器的第一级中,利用电流缓冲器结构隔离后续电路对输入信号的影响,通过比较存储单元电流与基准电流,生成比较结果,同时通过基准电流限制高压时的电流。比较结果经共源极放大器放大后与基准电压进行二次比较,以提升读取的准确性和速度。流片验证结果表明,与采用传统动态比较器的存储器相比,本设计读取速度提高了73.2%,低压工作条件下的读取准确性提高了95.2%,同时功耗降低了35.7%,外围电路面积减小了79.1%。Based on SMIC 90 nm CMOS process,a dynamic current comparator for floating-gate one-time programmable non-volatile memory was designed to address the issue of excessive voltage swings affecting the accuracy and stability of traditional dynamic comparators in industrial production and automotive systems.Besides,a bias circuit that varies with the supply voltage was designed to provide reference voltage and current for the comparator.In the first stage of the dynamic current comparator,a current buffer structure was used to isolate the influence of the subsequent circuits on the input signals.The comparison result was generated by comparing the memory cell current with the reference current,while the current at high voltages was limited by the reference current.The comparison result was amplified by a common-source amplifier and compared again with the reference voltage to improve the read accuracy and speed.The chip test results show that compared with the memory with traditional dynamic comparators,this design improves the read speed by 73.2%and improves read accuracy under lowvoltage operating conditions by 95.2%,while reduces power consumption by 35.7%and reduces peripheral circuit area by 79.1%.

关 键 词：强臂比较器 双尾型电流比较器 低延时 低功耗 宽电压裕度 

分 类 号：TN710.4[电子电信—电路与系统] TN432