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作 者:温连健 刘超[1] 董强 Wen Lianjian;Liu Chao;Dong Qiang(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China)
机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051
出 处:《半导体技术》2024年第11期1043-1048,共6页Semiconductor Technology
摘 要:为满足高功率射频微系统的散热需求,提出了一种纳米银胶粘结高导热金刚石载体的高功率密度芯片的散热方案。通过实验对比研究了4种方案(纳米银胶粘结芯片和金刚石载体、金锡焊料烧结芯片和金刚石载体、纳米银胶粘结芯片和钼铜载体及金锡焊料烧结芯片和钼铜载体)芯片的结温和热阻。依据实验方案建立高精度温度场散热仿真模型,探究了载体厚度及载体面积对芯片结温的影响。结果表明,采用纳米银胶粘结芯片和金刚石载体的方案时,热阻明显小于其他封装形式,散热效果最好。增大金刚石载体面积和厚度可以增强散热效果,金刚石载体厚度为0.3~0.4 mm、载体面积为芯片面积的3倍时,实用性和散热效果最佳。减薄钼铜载体对散热有利,钼铜载体面积对散热影响不大。In order to meet the heat dissipation requirements of high power RF microsystems,a heat dissipation scheme for high power density chip with nano-silver adhesive bonded high thermal conductivity diamond carrier was proposed.The junction temperature and thermal resistance of four kinds of schemes(chip bonded to diamond carrier by nano-silver adhesive,chip sintered to diamond carrier by AuSn solder,chip bonded to Mo-Cu carrier by nano-silver adhesive and chip sintered to Mo-Cu carrier by AuSn solder)were studied through experiments.Based on the experimental schemes,a high precision simulation model of temperature field heat dissipation was established,and the influences of carrier thickness and carrier area on chip junction temperature were investigated.The results show that the thermal resistance of the scheme(chip bonded to diamond carrier by nano-silver adhesive)is obviously lower than that of other packaging forms,and the heat dissipation effect is the best.Increasing the area and thickness of the diamond carrier can enhance the heat dissipation effect.When the thickness of the diamond carrier is 0.3-0.4 mm and the carrier area is three times the chip area,the practicability and heat dissipation effect are the best.Thinning Mo-Cu carrier is beneficial to heat dissipation,and the area of Mo-Cu carrier has little effect on heat dissipation.
关 键 词:金刚石 纳米银胶 散热 GaN功率放大器 芯片结温
分 类 号:TN305.94[电子电信—物理电子学]
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